Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical an...Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10^（-4） Ω·cm and the highest carrier concentration of 1.86×10^（21） cm^（-3） can be obtained from Zn O thin films with an indium content of 5at% in the target.展开更多
Solar-blind imaging has attracted considerable interest in both military and civilian applications,spurring the development of high-performance deep-ultraviolet photodetector arrays(PDAs) with wide-bandgap semiconduct...Solar-blind imaging has attracted considerable interest in both military and civilian applications,spurring the development of high-performance deep-ultraviolet photodetector arrays(PDAs) with wide-bandgap semiconductor materials.Herein,we present a novel method to enhance the performance of solar-blind PDAs(SBPDs) using β-Ga_(2)O_(3) films obtained by the phase transition of heterogeneous epitaxial sub-stable ε-Ga_(2)O_(3),achieved through high-temperature rapid annealing.Metal-semiconductor-metaltype SBPDs based on phase-transformed β-Ga_(2)O_(3) films exhibited superior performance,including an ultrahigh responsivity of 459.38 A/W,detectivity of 10^(14)–10^(15) Jones,external quantum efficiency of 10^(4)%–10^(5)%,rejection ratio(R_(254)/R_(365)) of 10^(5)–10^(6),photo-to-dark current ratio of 10^(4)–10^(6),fast response speed of 1.01 s/0.06 s,and favorable stability.Notably,the ultrahigh responsivity of β-Ga_(2)O_(3)-film-based devices was approximately 222-fold higher than that of ε-Ga_(2)O_(3) film-based devices.The assembled 4×5 β-Ga_(2)O_(3) film-based PDAs exhibited favorable uniformity,repeatability,and high spatial resolution for solarblind imaging.Our study offers a promising approach for the development of high-performance β-Ga_(2)O_(3)-based PDAs for solarblind ultraviolet imaging with potential applications in both military and civilian fields.展开更多
基金Funded by the Fundamental Research Fund for the Central Universities(No.CDJXS10102207)the National Natural Science Foundation of China(Nos.11075314,11404302 and 50942021)+2 种基金the Natural Science Foundation of Chongqing City(2011BA4031)the Third Stage of“211”Innovative Talent Training Project(No.S-09109)the Sharing Fund of Large-scale Equipment of Chongqing University(Nos.2010063072 and 2010121556)
文摘Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10^（-4） Ω·cm and the highest carrier concentration of 1.86×10^（21） cm^（-3） can be obtained from Zn O thin films with an indium content of 5at% in the target.
基金supported by the National Natural Science Foundation of China(Grant Nos.11904041 and 12104077)the Natural Science Foundation of Chongqing(Grant Nos.cstc2020jcyj-msxmX0557,cstc2019jcyj-msxmX0237,cstc2020jcyj-msxmX0533,and CSTB2022BSXM-JCX0090)+1 种基金the Science and Technology Research Project of Chongqing Education Committee(Grant Nos.KJQN202100540,KJQN202000511,and KJQN202100501)the College Students Innovation and Entrepreneurship Training Program of Chongqing City(Grant No.S202210637052)。
文摘Solar-blind imaging has attracted considerable interest in both military and civilian applications,spurring the development of high-performance deep-ultraviolet photodetector arrays(PDAs) with wide-bandgap semiconductor materials.Herein,we present a novel method to enhance the performance of solar-blind PDAs(SBPDs) using β-Ga_(2)O_(3) films obtained by the phase transition of heterogeneous epitaxial sub-stable ε-Ga_(2)O_(3),achieved through high-temperature rapid annealing.Metal-semiconductor-metaltype SBPDs based on phase-transformed β-Ga_(2)O_(3) films exhibited superior performance,including an ultrahigh responsivity of 459.38 A/W,detectivity of 10^(14)–10^(15) Jones,external quantum efficiency of 10^(4)%–10^(5)%,rejection ratio(R_(254)/R_(365)) of 10^(5)–10^(6),photo-to-dark current ratio of 10^(4)–10^(6),fast response speed of 1.01 s/0.06 s,and favorable stability.Notably,the ultrahigh responsivity of β-Ga_(2)O_(3)-film-based devices was approximately 222-fold higher than that of ε-Ga_(2)O_(3) film-based devices.The assembled 4×5 β-Ga_(2)O_(3) film-based PDAs exhibited favorable uniformity,repeatability,and high spatial resolution for solarblind imaging.Our study offers a promising approach for the development of high-performance β-Ga_(2)O_(3)-based PDAs for solarblind ultraviolet imaging with potential applications in both military and civilian fields.
