This work details the development of a broad-spectrum LNA (Low Noise Amplifier) circuit using a 65 nm CMOS technology. The design incorporates an inductive degeneracy circuit, employing a theoretical approach to enhan...This work details the development of a broad-spectrum LNA (Low Noise Amplifier) circuit using a 65 nm CMOS technology. The design incorporates an inductive degeneracy circuit, employing a theoretical approach to enhance gain, minimize noise levels, and uphold low power consumption. The progression includes a shift to a cascode structure to further refine LNA parameters. Ultimately, with a 1.8 V bias, the achieved performance showcases a gain-to-noise figure ratio of 16 dB/0.5 dB, an IIP3 linearity at 5.1 dBm, and a power consumption of 3 mW. This architecture is adept at operating across a wide frequency band spanning from 0.5 GHz to 6 GHz, rendering it applicable in diverse RF scenarios.展开更多
文摘This work details the development of a broad-spectrum LNA (Low Noise Amplifier) circuit using a 65 nm CMOS technology. The design incorporates an inductive degeneracy circuit, employing a theoretical approach to enhance gain, minimize noise levels, and uphold low power consumption. The progression includes a shift to a cascode structure to further refine LNA parameters. Ultimately, with a 1.8 V bias, the achieved performance showcases a gain-to-noise figure ratio of 16 dB/0.5 dB, an IIP3 linearity at 5.1 dBm, and a power consumption of 3 mW. This architecture is adept at operating across a wide frequency band spanning from 0.5 GHz to 6 GHz, rendering it applicable in diverse RF scenarios.
