This review and research study provides conclusive discussion on the electron and hole effective masses in thermal silicon dioxide placing their values at 0.42m and 0.58m,where m is the free electron mass,correct to t...This review and research study provides conclusive discussion on the electron and hole effective masses in thermal silicon dioxide placing their values at 0.42m and 0.58m,where m is the free electron mass,correct to two decimal places.Only one of the masses needs to be determined as the electron and hole masses in materials add up to be equal to free electron mass with the hole effective mass being larger than the electron effective mass.The review also convinces the reader that the CBO(conduction band offset)or the Si-SiO2 barrier height at the oxide/silicon interface of a Si MOS(metal-oxide-semiconductor)device is 3.20 eV.展开更多
The properties of a metal-oxide-semiconductor device on a single layer MoS_(2)(molybdenum disulfide)semiconductor are determined theoretically utilizing the concept of physics that the carrier effective masses in mate...The properties of a metal-oxide-semiconductor device on a single layer MoS_(2)(molybdenum disulfide)semiconductor are determined theoretically utilizing the concept of physics that the carrier effective masses in materials are related to the intrinsic Fermi energy levels in materials by the universal mass-energy equivalence equation given as dE/E=dm/m,where E is the energy and m is the mass of the free electron.The known parameters of electron effective mass of 0.48 m and the direct bandgap of 1.8 eV for monolayer MoS_(2) semiconductor are utilized to determine the properties of the MOS(metal-oxide-semiconductor)device,with the given previous research consequence that the threshold for electron heating in SiO_(2) is 2 MV/cm-eV.展开更多
文摘This review and research study provides conclusive discussion on the electron and hole effective masses in thermal silicon dioxide placing their values at 0.42m and 0.58m,where m is the free electron mass,correct to two decimal places.Only one of the masses needs to be determined as the electron and hole masses in materials add up to be equal to free electron mass with the hole effective mass being larger than the electron effective mass.The review also convinces the reader that the CBO(conduction band offset)or the Si-SiO2 barrier height at the oxide/silicon interface of a Si MOS(metal-oxide-semiconductor)device is 3.20 eV.
文摘The properties of a metal-oxide-semiconductor device on a single layer MoS_(2)(molybdenum disulfide)semiconductor are determined theoretically utilizing the concept of physics that the carrier effective masses in materials are related to the intrinsic Fermi energy levels in materials by the universal mass-energy equivalence equation given as dE/E=dm/m,where E is the energy and m is the mass of the free electron.The known parameters of electron effective mass of 0.48 m and the direct bandgap of 1.8 eV for monolayer MoS_(2) semiconductor are utilized to determine the properties of the MOS(metal-oxide-semiconductor)device,with the given previous research consequence that the threshold for electron heating in SiO_(2) is 2 MV/cm-eV.
