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3D Multi-gate Transistors: Concept, Operation, and Fabrication
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作者 Nader Shehata Abdel-Rahman Gaber +5 位作者 Ahmed Naguib Ayman E. Selmy Hossam Hassan Ibrahim Shoeer Omar Ahmadien rewan nabeel 《Journal of Electrical Engineering》 2015年第1期1-14,共14页
The multi-gate transistors such as Fin-FETs, Tri-gate FETs, and Gate-all-around (GAA) FETs are remarkable breakthrough in the electronic industry. 3D Transistor is taking the place of the conventional 2D planar tran... The multi-gate transistors such as Fin-FETs, Tri-gate FETs, and Gate-all-around (GAA) FETs are remarkable breakthrough in the electronic industry. 3D Transistor is taking the place of the conventional 2D planar transistor for many reasons. 3D transistors afford more scalability, energy efficient performance than planar transistors and increase the control on the channel region to reduce the short channel effect, which enables us to extend Moore's law to further extent. In this paper, we will present a review about their structure, operation, types and fabrication. 展开更多
关键词 Fin-FET transistor fabrication.
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