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Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor
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作者 吕利 孙建东 +4 位作者 roger a.lewis 孙云飞 吴东岷 蔡勇 秦华 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第2期485-489,共5页
In the terahertz(THz) regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for ... In the terahertz(THz) regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs.Here,we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor.Experiment results agree well with the electromagnetic-wave simulations.The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor. 展开更多
关键词 terahertz detector terahertz antenna near-field probe high electron mobility transistor
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