Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD)and its ion-injection mask design method are proposed and verified.The comparative simulations and ...Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD)and its ion-injection mask design method are proposed and verified.The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD(T-VLD).Vertical double diffusion MOSFET(VDMOS)with OID-VLD achieved breakdown voltage(BV)of 1684 V and passed the 168 hours 100℃-110℃-120℃-125℃high-temperature reverse bias(HTRB)test,while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120℃HTRB test.展开更多
Susceptibility and morphological characteristics of crevice corrosion for SS316, SS904L, SS254sMo and SS2507 in thesimulated low-temperature multi-effect distillation environment were investigated by cyclic polarizati...Susceptibility and morphological characteristics of crevice corrosion for SS316, SS904L, SS254sMo and SS2507 in thesimulated low-temperature multi-effect distillation environment were investigated by cyclic polarization test, scanningelectron microscope and laser microscope. The results show that the crevice corrosion resistance of four kinds of stainlesssteel is ranked as SS254sMo ≈ SS2507 〉 SS316 〉 SS904L. There are ＂cover＂ structures over the edge of active crevicecorrosion regions of SS904L, SS254sMo and SS2507, but SS316 is an exception. Galvanic corrosion characteristicsappeared in the crevice of duplex supper stainless steel SS2507.展开更多
基金Project supported by the Key Research and Development Program of Jiangsu Province,China(Grant No.BE2020010)the Natural Science Foundation of Guangdong Province,China(Grant No.2023A1515012652)。
文摘Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD)and its ion-injection mask design method are proposed and verified.The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD(T-VLD).Vertical double diffusion MOSFET(VDMOS)with OID-VLD achieved breakdown voltage(BV)of 1684 V and passed the 168 hours 100℃-110℃-120℃-125℃high-temperature reverse bias(HTRB)test,while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120℃HTRB test.
基金supported by the National High Technology Research and Development Program(‘‘863’’ Program)of China(No.2015AA034301)the National Natural Science Foundation of China(No.51501201)
文摘Susceptibility and morphological characteristics of crevice corrosion for SS316, SS904L, SS254sMo and SS2507 in thesimulated low-temperature multi-effect distillation environment were investigated by cyclic polarization test, scanningelectron microscope and laser microscope. The results show that the crevice corrosion resistance of four kinds of stainlesssteel is ranked as SS254sMo ≈ SS2507 〉 SS316 〉 SS904L. There are ＂cover＂ structures over the edge of active crevicecorrosion regions of SS904L, SS254sMo and SS2507, but SS316 is an exception. Galvanic corrosion characteristicsappeared in the crevice of duplex supper stainless steel SS2507.
