The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics.In this work,TiN/Hf_(0.5)Zr_(0.5)O_(2)/TiN capacitors that are fre...The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics.In this work,TiN/Hf_(0.5)Zr_(0.5)O_(2)/TiN capacitors that are free from the wake-up effect are investigated systematically from room temperature(300 K)to cryogenic temperature(30 K).We observe a consistent decrease in permittivity(εr)and a progressive increase in coercive electric field(Ec)as temperatures decrease.Our investigation reveals exceptional stability in the double remnant polarization(2P_(r))of our ferroelectric thin films across a wide temperature range.Specifically,at 30 K,a 2P_(r)of 36μC/cm^(2)under an applied electric field of 3.0 MV/cm is achieved.Moreover,we observed a reduced fatigue effect at 30 K in comparison to 300 K.The stable ferroelectric properties and endurance characteristics demonstrate the feasibility of utilizing HfO_(2)based ferroelectric thin films for cryo-electronics applications.展开更多
Selector devices are indispensable components of large-scale memristor array systems.The thereinto,ovonic threshold switching(OTS)selector is one of the most suitable candidates for selector devices,owing to its high ...Selector devices are indispensable components of large-scale memristor array systems.The thereinto,ovonic threshold switching(OTS)selector is one of the most suitable candidates for selector devices,owing to its high selectivity and scalability.However,OTS selectors suffer from poor endurance and stability which are persistent tricky problems for applica-tion.Here,we report on a multilayer OTS selector based on simple GeSe and doped-GeSe.The experimental results show im-proving selector performed extraordinary endurance up to 1010 and the fluctuation of threshold voltage is 2.5%.The reason for the improvement may lie in more interface states which strengthen the interaction among individual layers.These develop-ments pave the way towards tuning a new class of OTS materials engineering,ensuring improvement of electrical perform-ance.展开更多
Oscillator is a common key component of electronic systems.The periodic signal produced by the oscillator is generally required in various applications,such as the electronic system clock,electronic neurons,and the tr...Oscillator is a common key component of electronic systems.The periodic signal produced by the oscillator is generally required in various applications,such as the electronic system clock,electronic neurons,and the true random number generator system[1-6].Capacitors and inductors are usually utilized to generate periodic waveforms in the traditional oscillator,which greatly reduces integration and cannot be packaged into chips[2].Oscillators based on a memristor have been proposed as a solution to these issues[7-14].The memristor has attracted great attention and has been widely applied in many fields,such as memory,com?puting,security,etc.展开更多
基金supported by the National Key R&D Program of China under Grant No.2022YFB3608400National Natural Science Foundation of China under Grant Nos.61825404,61888102,and 62104044the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No.XDB44000000 and the project of MOE innovation platform.
文摘The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics.In this work,TiN/Hf_(0.5)Zr_(0.5)O_(2)/TiN capacitors that are free from the wake-up effect are investigated systematically from room temperature(300 K)to cryogenic temperature(30 K).We observe a consistent decrease in permittivity(εr)and a progressive increase in coercive electric field(Ec)as temperatures decrease.Our investigation reveals exceptional stability in the double remnant polarization(2P_(r))of our ferroelectric thin films across a wide temperature range.Specifically,at 30 K,a 2P_(r)of 36μC/cm^(2)under an applied electric field of 3.0 MV/cm is achieved.Moreover,we observed a reduced fatigue effect at 30 K in comparison to 300 K.The stable ferroelectric properties and endurance characteristics demonstrate the feasibility of utilizing HfO_(2)based ferroelectric thin films for cryo-electronics applications.
基金supported by National Natural Science Foundation of China(Grant Nos.61974164,62074166,61804181,62004219,and 6200422).
文摘Selector devices are indispensable components of large-scale memristor array systems.The thereinto,ovonic threshold switching(OTS)selector is one of the most suitable candidates for selector devices,owing to its high selectivity and scalability.However,OTS selectors suffer from poor endurance and stability which are persistent tricky problems for applica-tion.Here,we report on a multilayer OTS selector based on simple GeSe and doped-GeSe.The experimental results show im-proving selector performed extraordinary endurance up to 1010 and the fluctuation of threshold voltage is 2.5%.The reason for the improvement may lie in more interface states which strengthen the interaction among individual layers.These develop-ments pave the way towards tuning a new class of OTS materials engineering,ensuring improvement of electrical perform-ance.
基金supported by the National Natural Science Foundation of China(Grant Nos.61604177,61974164,61732020,61821091,61825404,61704191,and 61804181)in part by the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDPB12)
文摘Oscillator is a common key component of electronic systems.The periodic signal produced by the oscillator is generally required in various applications,such as the electronic system clock,electronic neurons,and the true random number generator system[1-6].Capacitors and inductors are usually utilized to generate periodic waveforms in the traditional oscillator,which greatly reduces integration and cannot be packaged into chips[2].Oscillators based on a memristor have been proposed as a solution to these issues[7-14].The memristor has attracted great attention and has been widely applied in many fields,such as memory,com?puting,security,etc.
