In this work, the prerequisite and mode of electromagnetic response of Al nanof ilms to electromagnetic wave field was suggested. Reflectance, transmittance in infrared region and carrier density of the films was meas...In this work, the prerequisite and mode of electromagnetic response of Al nanof ilms to electromagnetic wave field was suggested. Reflectance, transmittance in infrared region and carrier density of the films was measured. With the carrier density of the films, the dependence of their plasma frequencies on the film thickness was obtained. On the other hand, the dependence of absorptance on the frequency of electromagnetic wave field was set up by using the measured reflectance and transmittance, which provided plasma frequency-film thickness relation as well. Similarity of both plasma frequency-film thickness relations proved plasma resonance as a mode of electromagnetic response in Al nanofilms.展开更多
文摘In this work, the prerequisite and mode of electromagnetic response of Al nanof ilms to electromagnetic wave field was suggested. Reflectance, transmittance in infrared region and carrier density of the films was measured. With the carrier density of the films, the dependence of their plasma frequencies on the film thickness was obtained. On the other hand, the dependence of absorptance on the frequency of electromagnetic wave field was set up by using the measured reflectance and transmittance, which provided plasma frequency-film thickness relation as well. Similarity of both plasma frequency-film thickness relations proved plasma resonance as a mode of electromagnetic response in Al nanofilms.
