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Grain boundary engineering of organic semiconductor films in organic transistors
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作者 Yanpeng Wang Shougang Sun +9 位作者 Yinan Huang Yao Fu Jiannan Qi Kai Tie Zhongwu Wang Fei Jiao rongmei si Xiaosong Chen Liqiang Li Wenping Hu 《Aggregate》 EI CAS 2023年第6期27-43,共17页
Organicfield-effect transistors(OFETs)show great application potential in organic electronic and optoelectronicfields due to their excellent mechanicalflexibility,low cost,and solution processing.However,grain boundaries... Organicfield-effect transistors(OFETs)show great application potential in organic electronic and optoelectronicfields due to their excellent mechanicalflexibility,low cost,and solution processing.However,grain boundaries(GBs)disrupt the aggrega-tion state of organic semiconductor(OSC)films and hinder electrical performance and stability,which limits the application of OFETs.Besides,the sensitive nature of GBs is widely used in sensing,but detailed descriptions of the GBs are scarce.This review aims tofill this knowledge gap.The role of GBs and their effect on the per-formance and stability of OFETs are analyzed,followed by a detailed summary of the characterization of GBs.Then,strategies for suppressing the negative effects of GBs and utilizing the sensitive nature of GBs for application are proposed.Finally,potential research directions for GBs in OFETs are discussed. 展开更多
关键词 aggregation states electrical performance grain boundaries organic field-effect transistors organic semiconductors STABILITY
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