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Creation and annihilation of artificial magnetic skyrmions with the electric field
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作者 程军 孙亮 +5 位作者 张一可 吉同舟 曹荣幸 缪冰锋 赵永刚 丁海峰 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第3期132-137,共6页
Recent theory and experiments show that artificial magnetic skyrmions can be stabilized at room temperature without the need for the external magnetic field,casting strong potentials for the device applications.In thi... Recent theory and experiments show that artificial magnetic skyrmions can be stabilized at room temperature without the need for the external magnetic field,casting strong potentials for the device applications.In this work,we study the electric field manipulation of artificial magnetic skyrmions imprinted by Co disks on CoPt multilayers utilizing the micromagnetic simulations.We find that the reversible annihilation and creation of skyrmions can be realized with the electric field via the strain mediated magnetoelastic coupling.In addition,we also demonstrate controllable manipulation of individual skyrmion,which opens a new platform for constructing magnetic field-free and low-energy dissipation skyrmion based media. 展开更多
关键词 SKYRMIONS magnetic anisotropy micromagnetic simulations
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Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs
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作者 曹荣幸 汪柯佳 +9 位作者 孟洋 李林欢 赵琳 韩丹 刘洋 郑澍 李红霞 蒋煜琪 曾祥华 薛玉雄 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第6期666-672,共7页
The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to ... The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer. 展开更多
关键词 SiC power MOSFET total ionizing dose(TID) single event gate rupture(SEGR) synergistic effect TCAD simulation
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Dehydro-Diels-Alder reaction and diamondization of bowl-shaped clusters C_(18)Te_(3)Br_(4)(Bu-O)_(6)
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作者 Jinbo Zhang Manli Ma +17 位作者 Rong Zhou Hongqiang Chu Xue Wang Shaojie Wang Huhu Tian Zhipeng Yan Mingtao Li Zhongyan Wu Bin Li Jiafeng Yan Lan Anh Thi Nguyen rongxing cao Guoqing Wu Xianghua Zeng Hao-Li Zhang Jaeyong Kim Lin Wang Yongjun Tian 《Nano Research》 SCIE EI CSCD 2022年第5期4606-4612,共7页
Dehydro-Diels-Alder(DDA)reaction is a textbook reaction for preparing six-membered rings in solution but is scarcely seen in solid-state synthesis.In this work,using multiple characterization techniques,we demonstrate... Dehydro-Diels-Alder(DDA)reaction is a textbook reaction for preparing six-membered rings in solution but is scarcely seen in solid-state synthesis.In this work,using multiple characterization techniques,we demonstrate that the bowl-shaped clusters C_(18)Te_(3)Br_(4)(Bu-O)_(6) might experience a DDA reaction at room temperature and high pressure between 5.5 and 7.4 GPa.Above 17.0 GPa,it is found that the bonding conversion from the intramolecular sp^(2) to the intermolecular spa occurred,in the form of pressure-induced diamondization.The recovered samples from 20.0 and 36.1 GPa showed incomplete reversibility,while the decompression-induced graphitization of glassy carbon was observed during decompression from 46.5 GPa.The electrochemical impedance spectroscopy results indicated that the transport properties changed from grain boundary dominant to grain dominant due to the DDA reaction and the grain boundary effect disappeared as the intermolecular sp3 bonding building-up and carrier transmission channel formation above 17.0 GPa.The results in this study open a new route to construct the crystalline carbon materials with different transport properties. 展开更多
关键词 polycyclic aromatic hydrocarbons dehydro-Diels-Alder reaction diamondization high-pressure
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