摩擦力显微镜(friction force microscopy,FFM)是一种基于摩擦力信号的原子力显微镜,能够对二维材料晶格进行快速、无损的高分辨成像.然而,由于热漂移、黏附力、表面静电等因素的影响,环境条件下二维材料的高分辨FFM成像仍面临着巨大挑...摩擦力显微镜(friction force microscopy,FFM)是一种基于摩擦力信号的原子力显微镜,能够对二维材料晶格进行快速、无损的高分辨成像.然而,由于热漂移、黏附力、表面静电等因素的影响,环境条件下二维材料的高分辨FFM成像仍面临着巨大挑战.基于以上问题,本文以高定向热解石墨为标准样品,通过对探针在样品表面黏滑行为的分析,系统研究了探针弹性常数、正应力和扫描速度对高分辨FFM成像的影响,并建立了一套可靠的二维材料晶格结构表征方法.该方法能够获得精确的结构信息,所测得的二维材料晶格常数平均误差小于2.3%.此外,该方法还适用于化学气相沉积法和剥离法制备的多种二维材料,展现出较高的普适性.本文的研究结果为环境条件下二维材料晶格结构的精确表征提供了新思路.展开更多
Two-dimensional(2D)semiconductors have attracted great attention to extend Moore’s law,which motivates the quest for fast growth of high-quality materials.However,taking MoS_(2) as an example,current methods yield 2D...Two-dimensional(2D)semiconductors have attracted great attention to extend Moore’s law,which motivates the quest for fast growth of high-quality materials.However,taking MoS_(2) as an example,current methods yield 2D MoS_(2) with a low growth rate and poor quality with vacancy concentrations three to five orders of magnitude higher than silicon and other commercial semiconductors.Here,we develop a strategy of using an intermediate product of iodine as a transport agent to carry metal precursors efficiently for ultrafast growth of high-quality MoS_(2).The grown MoS_(2) has the lowest density of sulfur vacancies(~1.41×10^(12) cm^(−2))reported so far and excellent electrical properties with high on/off current ratios of 108 and carrier mobility of 175 cm^(2) V^(−1) s^(−1).Theoretical calculations show that by incorporating iodine,the nucleation barrier of MoS_(2) growth with sulfur-terminated edges reduces dramatically.The sufficient supply of precursor and low nucleation energy together boost the ultrafast growth of sub-millimeter MoS_(2) domains within seconds.This work provides an effective method for the ultrafast growth of 2D semiconductors with high quality,which will promote their applications.展开更多
文摘摩擦力显微镜(friction force microscopy,FFM)是一种基于摩擦力信号的原子力显微镜,能够对二维材料晶格进行快速、无损的高分辨成像.然而,由于热漂移、黏附力、表面静电等因素的影响,环境条件下二维材料的高分辨FFM成像仍面临着巨大挑战.基于以上问题,本文以高定向热解石墨为标准样品,通过对探针在样品表面黏滑行为的分析,系统研究了探针弹性常数、正应力和扫描速度对高分辨FFM成像的影响,并建立了一套可靠的二维材料晶格结构表征方法.该方法能够获得精确的结构信息,所测得的二维材料晶格常数平均误差小于2.3%.此外,该方法还适用于化学气相沉积法和剥离法制备的多种二维材料,展现出较高的普适性.本文的研究结果为环境条件下二维材料晶格结构的精确表征提供了新思路.
基金This work was supported by the National Key R&D Program(2018YFA0307300)the National Natural Science Foundation of China(51991343,51991340,52188101 and 51920105002)+3 种基金the China Postdoctoral Science Foundation(2021M701948)the National Science Fund for Distinguished Young Scholars(52125309)Guangdong Innovative and Entrepreneurial Research Team Program(2017ZT07C341)Shenzhen Basic Research Project(JCYJ20200109144616617 and JCYJ20220818101014029).
文摘Two-dimensional(2D)semiconductors have attracted great attention to extend Moore’s law,which motivates the quest for fast growth of high-quality materials.However,taking MoS_(2) as an example,current methods yield 2D MoS_(2) with a low growth rate and poor quality with vacancy concentrations three to five orders of magnitude higher than silicon and other commercial semiconductors.Here,we develop a strategy of using an intermediate product of iodine as a transport agent to carry metal precursors efficiently for ultrafast growth of high-quality MoS_(2).The grown MoS_(2) has the lowest density of sulfur vacancies(~1.41×10^(12) cm^(−2))reported so far and excellent electrical properties with high on/off current ratios of 108 and carrier mobility of 175 cm^(2) V^(−1) s^(−1).Theoretical calculations show that by incorporating iodine,the nucleation barrier of MoS_(2) growth with sulfur-terminated edges reduces dramatically.The sufficient supply of precursor and low nucleation energy together boost the ultrafast growth of sub-millimeter MoS_(2) domains within seconds.This work provides an effective method for the ultrafast growth of 2D semiconductors with high quality,which will promote their applications.
基金supported by the National Science Fund for Distinguished Young Scholars(52125309)the National Natural Science Foundation of China(51991343,51920105002,51991340,52188101,and 11974156)+3 种基金Guangdong Innovative and Entrepreneurial Research Team Program(2017ZT07C341 and 2019ZT08C044)the Bureau of Industry and Information Technology of Shenzhen for the “2017 Graphene Manufacturing Innovation Center Project”(201901171523)Shenzhen Basic Research Project(JCYJ20200109144616617 and JCYJ20190809180605522)Shenzhen Science and Technology Program(KQTD20190929173815000 and 20200925161102001)。
