Microstructure,optical,and photoluminescence properties ofβ-Ga_(2)O_(3)films prepared by pulsed laser deposition under different oxygen partial pressures

Theβ-Ga_(2)O_(3)films are prepared on polished Al_(2)O_(3)(0001)substrates by pulsed laser deposition at different oxygen partial pressures.The influence of oxygen partial pressure on crystal structure,surface morphology,thickness,optical properties,and photoluminescence properties are studied by x-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM),spectrophotometer,and spectrofluorometer.The results of x-ray diffraction and atomic force microscope indicate that with the decrease of oxygen pressure,the full width at half maximum(FWHM)and grain size increase.With the increase of oxygen pressure,the thickness of the films first increases and then decreases.The room-temperature UV-visible(UV-Vis)absorption spectra show that the bandgap of theβ-Ga_(2)O_(3)film increases from4.76 e V to 4.91 e V as oxygen pressure decreasing.Room temperature photoluminescence spectra reveal that the emission band can be divided into four Gaussian bands centered at about 310 nm(~4.0 e V),360 nm(~3.44 e V),445 nm(~2.79 e V),and 467 nm(~2.66 e V),respectively.In addition,the total photoluminescence intensity decreases with oxygen pressure increasing,and it is found that the two UV bands are related to self-trapped holes(STHs)at O1 sites and between two O2-s sites,respectively,and the two blue bands originate from V_(Ga)^(2-)at Ga1 tetrahedral sites.The photoluminescence mechanism of the films is also discussed.These results will lay a foundation for investigating the Ga_(2)O_(3)film-based electronic devices.

Photoluminescence properties and energy transfer of novel orange–red emitting phosphors:Ba_(3)Bi_(2)(PO_(4))_(4):Sm^(3+),Eu^(3+) for white light-emitting diodes

Sm^(3+), Eu^(3+)co-coped Ba_(3)Bi_(2)(PO_(4))_(4) phosphors,as potential phosphors for white light-emitting diode applications, were synthesized through the solid-state reaction method for the first time. The crystal structure,absorption spectra, photoluminescence properties, decay time, energy transfer mechanism, temperature-dependent properties, and Commission International De L’Eclairage(CIE) chromaticity coordinates were investigated systematically. The pure eulytite-type Ba_(3)Bi_(2)(PO_(4))_(4) phase was obtained after heating at 980 ℃ for 5 h. A notably enhanced absorption efficiency at 393 nm was observed when Sm^(3+), as a sensitizer, was doped into Ba_(3)Bi_(1.82)(PO_(4))_(4): 0.18 Eu^(3+)and the band gap of the Ba_(3)Bi_(2)(PO_(4))_(4) host was estimated to be 4.19 eV. The emission intensity of Ba_(3)Bi_(1.82)(PO_(4))_(4): 0.18 Eu^(3+)was significantly enhanced when Sm^(3+)was co-doped. The existence and mechanism of energy transfer from Sm^(3+) to Eu^(3+)were evaluated by photoluminescence spectra and decay time measurements. The CIE chromaticity coordinate of Ba3 Bi1.75(PO4)4: 0.07 Sm^(3+), 0.18 Eu^(3+) phosphor was calculated to be(0.5746, 0.4197), respectively.