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Probing Lattice Vibrations at SiO_2/Si Surface and Interface with Nanometer Resolution 被引量:2
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作者 Yue-Hui Li Mei Wu +7 位作者 rui-shi qi Ning Li Yuan-Wei Sun Cheng-Long Shi Xue-Tao Zhu Jian-Dong Guo Da-Peng Yu Peng Gao 《Chinese Physics Letters》 SCIE CAS CSCD 2019年第2期40-48,共9页
Recent advances in monochromatic aberration corrected electron microscopy make it possible to detect the lattice vibrations with both high-energy resolution and high spatial resolution. Here, we use sub-10 meV electro... Recent advances in monochromatic aberration corrected electron microscopy make it possible to detect the lattice vibrations with both high-energy resolution and high spatial resolution. Here, we use sub-10 meV electron energy loss spectroscopy to investigate the local vibrational properties of the SiO_2/Si surface and interface. The energy of the surface mode is thickness dependent, showing a blue shift as z-thickness(parallel to the fast electron beam)of SiO_2 film increases, while the energy of the bulk mode and the interface mode keeps constant. The intensity of the surface mode is well-described by a Bessel function of the second kind. The mechanism of the observed spatially dependent vibrational behavior is discussed and compared with dielectric response theory analysis. Our nanometer scale measurements provide useful information on the bonding conditions at the surface and interface. 展开更多
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