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Determination of activation energy of ion-implanted deuterium release from W–Y2O3 被引量:1
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作者 Xue-Feng Wang Ji-Liang Wu +7 位作者 Qiang Li rui-zhu yang Zhan-Lei Wang Chang-An Chen Chun-Rong Feng Yong-Chu Rao Xiao-Hong Chen Xiao-Qiu Ye 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第6期327-332,共6页
The retention and release of deuterium in W–2%Y2O3 composite materials and commercially pure tungsten after they have been implanted by deuterium plasma(flux ~ 3.71 × 1021 D/m2·s, energy ~ 25 eV, and fluenc... The retention and release of deuterium in W–2%Y2O3 composite materials and commercially pure tungsten after they have been implanted by deuterium plasma(flux ~ 3.71 × 1021 D/m2·s, energy ~ 25 eV, and fluence up to 1.3 × 1026D/m2)are studied. The results show that the total amount of deuterium released from W–2%Y2O3 is 5.23 × 1020 D/m2(2.5 K/min),about 2.5 times higher than that from the pure tungsten. Thermal desorption spectra(TDS) at different heating rates(2.5 K/min–20 K/min) reveal that both W and W–2%Y2O3 have two main deuterium trapped sites. For the low temperature trap, the deuterium desorption activation energy is 0.85 eV(grain boundary) in W, while for high temperature trap, the desorption activation energy is 1.57 eV(vacancy) in W and 1.73 eV(vacancy) in W–2%Y2O3. 展开更多
关键词 metals and alloys plasma-based ion implantation thermal desorption diffusion in solid
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Superconductivity of bilayer titanium/indium thin film grown on SiO2/Si(001)
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作者 Zhao-Hong Mo Chao Lu +14 位作者 Yi Liu Wei Feng Yun Zhang Wen Zhang Shi-Yong Tan Hong-Jun Zhang Chun-Yu Guo Xiao-Dong Wang Liang Wang rui-zhu yang Zhong-Guo Ren Xie-Gang Zhu Zhong-Hua Xiong Qi An Xin-Chun Lai 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第6期429-433,共5页
Bilayer superconducting films with tunable transition temperature(Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, ... Bilayer superconducting films with tunable transition temperature(Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium(Ti/In) bilayer superconducting films are successfully fabricated on SiO2/Si(001)substrates by molecular beam epitaxy(MBE). The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to-150?C during indium evaporation. We measure the critical temperature under a bias current of 10 μA, and obtain different superconducting transition temperatures ranging from 645 m K to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases. 展开更多
关键词 titanium/indium thin film molecular beam epitaxy (MBE) proximity effect
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