The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric memory.However,the complete mechanism underlying its ferroelectricity remains to be fully elucidated.In this study...The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric memory.However,the complete mechanism underlying its ferroelectricity remains to be fully elucidated.In this study,we conducted a systematic study on the microstructures and ferroelectric properties of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films with various annealing rates in the rapid thermal annealing.It was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size,reduced surface roughness and a higher portion of orthorhombic phase.Moreover,these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing rates.The grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films,which was weakened with decreasing annealing rate.Our findings revealed that this internal stress,along with the stress originating from the top/bottom electrode,plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin films.By carefully controlling the annealing rate,we could effectively regulate the tension stress within HZO thin films,thus achieving precise control over their ferroelectric properties.This work established a valuable pathway for tailoring the performance of HZO thin films for various applications.展开更多
This paper reports the improvement of electrical,ferroelectric and endurance of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thinfilm capacitors by implementing W electrode.The W/HZO/W capacitor shows excellent pristine 2 P_(r)values of...This paper reports the improvement of electrical,ferroelectric and endurance of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thinfilm capacitors by implementing W electrode.The W/HZO/W capacitor shows excellent pristine 2 P_(r)values of 45.1 gC/cm^(2)at±6 V,which are much higher than those of TiN/HZO/W(34.4μC/cm^(2))and W/HZO/TiN(26.9μC/cm^(2))capacitors.Notably,the maximum initial 2 P_(r)value of W/HZO/W capacitor can reach as high as 57.9μC/cm^(2)at±7.5 V.These strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode,allowing for enhancement of o-phase formation.Moreover,the W/HZO/W capacitor also exhibits higher endurance,smaller wake-up effect(10.1%)and superior fatigue properties up to 1.5×10^(10)cycles compared to the TiN/HZO/W and W/HZO/TiN capacitors.Such improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magnitude compared to the W/HZO/TiN capacitor.These results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation,reduces oxygen vacancies,mitigates wake-up effect and improves reliability.展开更多
Flexible sensors have been widely investigated due to their broad application prospects in various flexible electronics.However,most of the presently studied flexible sensors are only suitable for working at room temp...Flexible sensors have been widely investigated due to their broad application prospects in various flexible electronics.However,most of the presently studied flexible sensors are only suitable for working at room temperature,and their applications at high or low temperatures are still a big challenge.In this work,we present a multimodal flexible sensor based on functional oxide La0.7Sr0.3MnO3(LSMO)thin film deposited on mica substrate.As a strain sensor,it shows excellent sensitivity to mechanical bending and high bending durability(up to 3600 cycles).Moreover,the LSMO/Mica sensor also shows a sensitive response to the magnetic field,implying its multimodal sensing ability.Most importantly,it can work in a wide temperature range from extreme low temperature down to 20K to high temperature up to 773 K.The flexible sensor based on the flexible LSMO/mica hetero-structure shows great potential applications for flexible electronics using at extreme temperature environment in the future.展开更多
Spiking neural network(SNN)consisting of memristor-based artificial neurons and synapses has emerged as a compact and energy-efficient hardware solution for spatiotemporal information processing.However,it is challeng...Spiking neural network(SNN)consisting of memristor-based artificial neurons and synapses has emerged as a compact and energy-efficient hardware solution for spatiotemporal information processing.However,it is challenging to develop memristive neurons and synapses based on the same material system because the required resistive switching(RS)characteristics are different.Here,it is shown that SrFeO_(x)(SFO),an intriguing material system exhibiting topotactic phase transformation between insulating brownmillerite(BM)SrFeO_(2).5 phase and conductive perovskite(PV)SrFeO_(3) phase,can be engineered into both neuronal and synaptic devices.Using a BM-SFO single layer as the RS medium,the Au/BM-SFO/SrRuO_(3)(SRO)memristor exhibits nonvolatile RS behavior originating from the formation/rupture of PV-SFO filaments in the BM-SFO matrix.By contrast,using a PV-SFO(matrix)/BM-SFO(interfacial layer)bilayer as the RS medium,the Au/PV-SFO/BM-SFO/SRO memristor exhibits volatile RS behavior originating from the interfacial BM-PV phase transformation.Synaptic and neuronal characteristics are further demonstrated in the Au/BM-SFO/SRO and Au/PV-SFO/BM-SFO/SRO memristors,respectively.Using the SFO-based synapses and neurons,fully memristive SNNs are constructed by simulation,which show good performance on unsupervised image recognition.Our study suggests that SFO is a versatile material platform on which both neuronal and synaptic devices can be developed for constructing fully memristive SNNs.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos.62174059 and 52250281)the Science and Technology Projects of Guangzhou Province of China (Grant No.202201000008)+1 种基金the Guangdong Science and Technology Project-International Cooperation (Grant No.2021A0505030064)the Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials (Grant No.2020B1212060066)。
文摘The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric memory.However,the complete mechanism underlying its ferroelectricity remains to be fully elucidated.In this study,we conducted a systematic study on the microstructures and ferroelectric properties of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films with various annealing rates in the rapid thermal annealing.It was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size,reduced surface roughness and a higher portion of orthorhombic phase.Moreover,these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing rates.The grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films,which was weakened with decreasing annealing rate.Our findings revealed that this internal stress,along with the stress originating from the top/bottom electrode,plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin films.By carefully controlling the annealing rate,we could effectively regulate the tension stress within HZO thin films,thus achieving precise control over their ferroelectric properties.This work established a valuable pathway for tailoring the performance of HZO thin films for various applications.
基金supported by the National Natural Science Foundation of China(62174059,51872099,and 91963102)Hong Kong Research Grant Council(15300619)+3 种基金Science and Technology Program of Guangzhou(201905-0001)Guangdong Science and Technology ProjectInternational Cooperation(2021A0505030064)the Program for Chang Jiang Scholars and Innovative Research Teams in Universities(IRT_17R40)the 111 Project。
基金supported by the National Natural Science Foundation of China(62174059,52250281 and 91963102)the Hong Kong Research Grant Council(15300619)+3 种基金the Science and Technology Projects in Guangzhou(202201000008)Guangdong Science and Technology Project-International Cooperation(2021A0505030064)Guangdong Provincial Key Laboratory of Optical Information Materials and Technology(2017B030301007)the Joint Funds of Basic and Applied Basic Research Foundation of Guangdong Province(2019A1515110605)。
基金financially supported by the National Natural Science Foundation of China(No.51872099)the Hong Kong Research Grant Council(No.15300619)+2 种基金the Science and Technology Program of Guangzhou(No.201905-0001)the Guangdong Science and Technology Project-International Cooperation(No.2021A0505030064)financial support by the Hong Kong Scholars Program(No.XJ2019006)。
文摘This paper reports the improvement of electrical,ferroelectric and endurance of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thinfilm capacitors by implementing W electrode.The W/HZO/W capacitor shows excellent pristine 2 P_(r)values of 45.1 gC/cm^(2)at±6 V,which are much higher than those of TiN/HZO/W(34.4μC/cm^(2))and W/HZO/TiN(26.9μC/cm^(2))capacitors.Notably,the maximum initial 2 P_(r)value of W/HZO/W capacitor can reach as high as 57.9μC/cm^(2)at±7.5 V.These strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode,allowing for enhancement of o-phase formation.Moreover,the W/HZO/W capacitor also exhibits higher endurance,smaller wake-up effect(10.1%)and superior fatigue properties up to 1.5×10^(10)cycles compared to the TiN/HZO/W and W/HZO/TiN capacitors.Such improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magnitude compared to the W/HZO/TiN capacitor.These results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation,reduces oxygen vacancies,mitigates wake-up effect and improves reliability.
基金This work was supported financially by the National Natural Science Foundation of China(No.51872099)the Project for Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme(2016),the Guangdong Innovative Research Team Program(No.2013C102)+1 种基金the Guangdong Provincial Key Laboratory of Optical Information Materials and Technology(No.2017B030301007)Science and Technology Program of Guangzhou(No.2019050001).
文摘Flexible sensors have been widely investigated due to their broad application prospects in various flexible electronics.However,most of the presently studied flexible sensors are only suitable for working at room temperature,and their applications at high or low temperatures are still a big challenge.In this work,we present a multimodal flexible sensor based on functional oxide La0.7Sr0.3MnO3(LSMO)thin film deposited on mica substrate.As a strain sensor,it shows excellent sensitivity to mechanical bending and high bending durability(up to 3600 cycles).Moreover,the LSMO/Mica sensor also shows a sensitive response to the magnetic field,implying its multimodal sensing ability.Most importantly,it can work in a wide temperature range from extreme low temperature down to 20K to high temperature up to 773 K.The flexible sensor based on the flexible LSMO/mica hetero-structure shows great potential applications for flexible electronics using at extreme temperature environment in the future.
基金The authors would like to thank the National Natural Science Foundation of China(Nos.92163210,U1932125,52172143)Science and Technology Program of Guangzhou(No.2019050001)Natural Science Foundation of Guangdong Province(No.2020A1515010996).
文摘Spiking neural network(SNN)consisting of memristor-based artificial neurons and synapses has emerged as a compact and energy-efficient hardware solution for spatiotemporal information processing.However,it is challenging to develop memristive neurons and synapses based on the same material system because the required resistive switching(RS)characteristics are different.Here,it is shown that SrFeO_(x)(SFO),an intriguing material system exhibiting topotactic phase transformation between insulating brownmillerite(BM)SrFeO_(2).5 phase and conductive perovskite(PV)SrFeO_(3) phase,can be engineered into both neuronal and synaptic devices.Using a BM-SFO single layer as the RS medium,the Au/BM-SFO/SrRuO_(3)(SRO)memristor exhibits nonvolatile RS behavior originating from the formation/rupture of PV-SFO filaments in the BM-SFO matrix.By contrast,using a PV-SFO(matrix)/BM-SFO(interfacial layer)bilayer as the RS medium,the Au/PV-SFO/BM-SFO/SRO memristor exhibits volatile RS behavior originating from the interfacial BM-PV phase transformation.Synaptic and neuronal characteristics are further demonstrated in the Au/BM-SFO/SRO and Au/PV-SFO/BM-SFO/SRO memristors,respectively.Using the SFO-based synapses and neurons,fully memristive SNNs are constructed by simulation,which show good performance on unsupervised image recognition.Our study suggests that SFO is a versatile material platform on which both neuronal and synaptic devices can be developed for constructing fully memristive SNNs.
