ZnSb/Ti_(3)C_(2)T_(x)MXene van der Waals heterojunction for flexible near-infrared photodetector arrays

Two-dimension(2D)van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared(NIR)photodetector.Here,we report the successful fabrication of ZnSb/Ti_(3)C_(2)T_(x)MXene based flexible NIR photodetector array via a facile photolithography technology.The single ZnSb/Ti_(3)C_(2)T_(x)photodetector exhibited a high light-to-dark current ratio of 4.98,fast response/recovery time(2.5/1.3 s)and excellent stability due to the tight connection between 2D ZnSb nanoplates and 2D Ti_(3)C_(2)T_(x)MXene nanoflakes,and the formed 2D van der Waals heterojunction.Thin polyethylene terephthalate(PET)substrate enables the ZnSb/Ti_(3)C_(2)T_(x)photodetector withstand bending such that stable photoelectrical properties with non-obvious change were maintained over 5000 bending cycles.Moreover,the ZnSb/Ti_(3)C_(2)T_(x)photodetectors were integrated into a 26×5 device array,realizing a NIR image sensing application.

Nb2O5 nanotubes on carbon cloth for high performance sodium-ion capacitors

Hybrid sodium-ion capacitors(SICs)bridge the gap between the supercapacitors(SCs)and batteries and have huge potential applications in large-scale energy storage.However,designing appropriate anode materials with fast kinetics behavior as well as long cycle life to match with the cathode electrodes remains a crucial challenge.Herein,Nb2O5 nanotubes and nanowire-to-nanotube homo-junctions were directly grown on the carbon cloth(CC)via a simple hydrothermal process through regulating the pH value of solution.The as-prepared Nb2O5@CC nanotubes displayed a high reversible capacity of 175 mA hg-1 at the current density of 1Ag-1 with the coulombic efficiency of 97%after 1500 cycles.Besides,the SICs fabricated with Nb2O5@CC and activated carbon(AC)electrode materials showed a high energy density of 195 W h kg-1 at 120 W kg-1,a power density of 7328 W kg-1 at 28 W hkg-1and 80%of the capacitance retention after 5000 cycles.Additionally,the flexible SIC devices can operate normally at various bendable conditions.The Nb2O5@CC nanotubes in this work can be promising electrode materials in flexible and wearable energy storage devices.

Self-catalyzed growth of GaSb nanowires for high performance ultraviolet-visible-near infrared photodetectors

A simple self-catalyzed chemical vapor deposition process was conducted to synthesize single-crystalline GaSb nanowires,where Ga droplets were utilized as the catalysts.The as-grown GaSb nanowires exhibited typical p-type semiconductor behavior with the calculated hole mobility of about 0.042 cm^2 V^-1 s^-1.The photoresponse properties of the GaSb nanowires were studied by fabricating nanowire photodetectors on both rigid and flexible substrates.The results revealed that the photodetectors exhibited broad spectral response ranging from ultraviolet,visible,to near-infrared region.For the device on rigid substrate,the corresponding responsivity and the detectivity were calculated to be 3.86×10^3 A W-1 and 3.15×10^13 Jones for 500 nm light,and 7.22×10^2 A W-1 and 5.90×10^12 Jones for 808 nm light,respectively,which were the highest value compared with those of other reported Ga1-xInxAsySb1-y structure nanowires.Besides,the flexible photodetectors not only maintained the comparable good photoresponse properties as the rigid one,but also possessed excellent mechanical flexibility and stability.This study could facilitate the understanding on the fundamental characteristics of self-catalyzed grown GaSb nanowires and the design of functional nano-optoelectronic devices based on GaSb nanowires.