Electron beams of 0.5, 1.5, 2.0, and 5.0 MeV were used to irradiate n-Si diodes to fluences of5.5×10^(13), 1.7×10^(14), and 3.3×1014 e cm^(-2). The forward voltage drop, minority carrier lifetime, and d...Electron beams of 0.5, 1.5, 2.0, and 5.0 MeV were used to irradiate n-Si diodes to fluences of5.5×10^(13), 1.7×10^(14), and 3.3×1014 e cm^(-2). The forward voltage drop, minority carrier lifetime, and deep level transient spectroscopy(DLTS) characteristics of silicon p–n junction diodes before and after irradiation were compared. At the fluence of 3.3×10^(14) e cm^(-2), the forward voltage drop increased from 1.25 V at 0.5 MeV to 7.96μs at 5.0 MeV, while the minority carrier lifetime decreased significantly from 7.09 ls at 0.5 MeV to 0.06μs at 5.0 MeV. Six types of changes in the energy levels in DLTS spectra were analyzed and discussed.展开更多
Cu/Al laminar composite was prepared by dipping Zn layer and then electroplating Cu thick layer on pure Al sheet.During annealing the Cu/Al composites at temperature from 473 to 673 K, the Cu/Al interfacial diffusion ...Cu/Al laminar composite was prepared by dipping Zn layer and then electroplating Cu thick layer on pure Al sheet.During annealing the Cu/Al composites at temperature from 473 to 673 K, the Cu/Al interfacial diffusion and reaction and itskinetics and also the electrical resistivity of the composites were studied. The results show that no Cu?Al IMC layer is observable asthe composites are annealed at 473 K for time till 360 h, indicating that the Zn intermediate layer can effectively suppress the Cu/Alinterfacial diffusion. However, as the composites are annealed at 573 K and above, Zn atoms in the Zn layer dissolve into the Culayer. Tri-layered reaction product of CuAl2/CuAl/Cu9Al4 then forms from the Al side to the Cu side. The IMC layer follows thediffusion-controlled growth kinetics. Electrical resistivity of the Cu/Al composites increases with the increase of the annealingtemperature and time.展开更多
基金supported by the Beijing education and scientific research department(No.KM201510005008)
文摘Electron beams of 0.5, 1.5, 2.0, and 5.0 MeV were used to irradiate n-Si diodes to fluences of5.5×10^(13), 1.7×10^(14), and 3.3×1014 e cm^(-2). The forward voltage drop, minority carrier lifetime, and deep level transient spectroscopy(DLTS) characteristics of silicon p–n junction diodes before and after irradiation were compared. At the fluence of 3.3×10^(14) e cm^(-2), the forward voltage drop increased from 1.25 V at 0.5 MeV to 7.96μs at 5.0 MeV, while the minority carrier lifetime decreased significantly from 7.09 ls at 0.5 MeV to 0.06μs at 5.0 MeV. Six types of changes in the energy levels in DLTS spectra were analyzed and discussed.
基金Project(2012QTXM0751)supported by the Scientific and Technological Research Project,State Grid,China
文摘Cu/Al laminar composite was prepared by dipping Zn layer and then electroplating Cu thick layer on pure Al sheet.During annealing the Cu/Al composites at temperature from 473 to 673 K, the Cu/Al interfacial diffusion and reaction and itskinetics and also the electrical resistivity of the composites were studied. The results show that no Cu?Al IMC layer is observable asthe composites are annealed at 473 K for time till 360 h, indicating that the Zn intermediate layer can effectively suppress the Cu/Alinterfacial diffusion. However, as the composites are annealed at 573 K and above, Zn atoms in the Zn layer dissolve into the Culayer. Tri-layered reaction product of CuAl2/CuAl/Cu9Al4 then forms from the Al side to the Cu side. The IMC layer follows thediffusion-controlled growth kinetics. Electrical resistivity of the Cu/Al composites increases with the increase of the annealingtemperature and time.
