We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane （F4-TCNQ） and MoO3 for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by ...We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane （F4-TCNQ） and MoO3 for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F4-TCNQ layer directly in contact with the pentacene layer and it is also enhanced by placing a MoO3 layer between the F4-TCNQ layer and the Au electrode. By examining the contact resistance using a field effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO3 layer and the Au electrode.展开更多
基金supported by the New Energy and Industrial Technology Development Organization(NEDO)the Funding Program for World-Leading Innovative R&D on Science and Technology(FIRST)the International Institute for Carbon Neutral Energy Research(WPI-I2CNER)sponsored by MEXT
文摘We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane （F4-TCNQ） and MoO3 for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F4-TCNQ layer directly in contact with the pentacene layer and it is also enhanced by placing a MoO3 layer between the F4-TCNQ layer and the Au electrode. By examining the contact resistance using a field effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO3 layer and the Au electrode.
