Using the effect of the temperature on the capacitance–voltage（C–V）and conductance–voltage（G/ω–V）characteristics of PtSi/n-Si（111）Schottky diodes the profile of apparent doping concentrationthe potential di...Using the effect of the temperature on the capacitance–voltage（C–V）and conductance–voltage（G/ω–V）characteristics of PtSi/n-Si（111）Schottky diodes the profile of apparent doping concentrationthe potential difference between the Fermi energy level and the bottom of the conduction bandapparent barrier heightseries resistanceand the interface state density Nss have been investigated.From the temperature dependence of（C–V）it was found that these parameters are non-uniformly changed with increasing temperature in a wide temperature range of 79–360 K.The voltage and temperature dependences of apparent carrier distribution we attributed to the existence of self-assembled patches similar the quantum wells,which formed due to the process of Pt Si formation on semiconductor and the presence of hexagonal voids of Si（111）.展开更多
文摘Using the effect of the temperature on the capacitance–voltage（C–V）and conductance–voltage（G/ω–V）characteristics of PtSi/n-Si（111）Schottky diodes the profile of apparent doping concentrationthe potential difference between the Fermi energy level and the bottom of the conduction bandapparent barrier heightseries resistanceand the interface state density Nss have been investigated.From the temperature dependence of（C–V）it was found that these parameters are non-uniformly changed with increasing temperature in a wide temperature range of 79–360 K.The voltage and temperature dependences of apparent carrier distribution we attributed to the existence of self-assembled patches similar the quantum wells,which formed due to the process of Pt Si formation on semiconductor and the presence of hexagonal voids of Si（111）.
