The effect of quantum well number on the quantum efficiency and temperature characteristics of In- GaN/GaN laser diodes （LDs） is determined and investigated. The 3-nm-thick In0.13Ca0.87N wells and two 6-am-thick GaN...The effect of quantum well number on the quantum efficiency and temperature characteristics of In- GaN/GaN laser diodes （LDs） is determined and investigated. The 3-nm-thick In0.13Ca0.87N wells and two 6-am-thick GaN barriers are selected as an active region for Fabry-Perot （FP） cavity waveguide edge emitting LD. The internal quantum efficiency and internal optical loss coefficient are extracted through the simulation software for single, double, and triple InGaN/GaN quantum wells. The effects of device temperature on the laser threshold current, external differential quantum efficiency （DQE）, and output wavelength are also investigated. The external quantum efficiency and characteristic temperature are improved significantly when the quantum well number is two. It is indicated that the laser structures with many quantum wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.展开更多
The operating parameters such as the internal quantum efficiency （η）, internal loss （α） and transparent threshold current density （J0） of double quantum well laser diodes were investigated and identified using...The operating parameters such as the internal quantum efficiency （η）, internal loss （α） and transparent threshold current density （J0） of double quantum well laser diodes were investigated and identified using the program, Integrated System Engineering-Technical Computer Aided Design （ISE-TCAD）. Various thicknesses （6, 7, 8, 10, 12 rim） of AlxInyGa1-x-yN barriers with （3 nm） Al0.08In0.08Ga0.84N wells as an active region were studied. The lowest threshold current （lth）, and the highest output power （Pop） were 116 mA and 196 mW respectively, at barriers thickness of 6 nm, Al mole fraction of 10% and In mole fraction of 1%, at an emission wavelength of 359.6 nm.展开更多
基金supports from Universiti Sains Malaysia,Ministry of Science Technology and Innovation (MOSTI),Ministry of Higher Education are gratefully acknowl-edged
文摘The effect of quantum well number on the quantum efficiency and temperature characteristics of In- GaN/GaN laser diodes （LDs） is determined and investigated. The 3-nm-thick In0.13Ca0.87N wells and two 6-am-thick GaN barriers are selected as an active region for Fabry-Perot （FP） cavity waveguide edge emitting LD. The internal quantum efficiency and internal optical loss coefficient are extracted through the simulation software for single, double, and triple InGaN/GaN quantum wells. The effects of device temperature on the laser threshold current, external differential quantum efficiency （DQE）, and output wavelength are also investigated. The external quantum efficiency and characteristic temperature are improved significantly when the quantum well number is two. It is indicated that the laser structures with many quantum wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.
基金conducted under Science Fund,Cycle 2007,of The Ministry of Science,Technology and Innovation,MalaysiaThe financial support from Universiti Sains Malaysia is gratefully acknowledged
文摘The operating parameters such as the internal quantum efficiency （η）, internal loss （α） and transparent threshold current density （J0） of double quantum well laser diodes were investigated and identified using the program, Integrated System Engineering-Technical Computer Aided Design （ISE-TCAD）. Various thicknesses （6, 7, 8, 10, 12 rim） of AlxInyGa1-x-yN barriers with （3 nm） Al0.08In0.08Ga0.84N wells as an active region were studied. The lowest threshold current （lth）, and the highest output power （Pop） were 116 mA and 196 mW respectively, at barriers thickness of 6 nm, Al mole fraction of 10% and In mole fraction of 1%, at an emission wavelength of 359.6 nm.
