期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Application of Reactive Ion Etching to the Fabrication of Microstructure on Mo/Si Multilayer 被引量:1
1
作者 乐孜纯 L.Dreeskornfeld +3 位作者 s.rahn R.Segler U.Kleineberg U.Heinzmann 《Chinese Physics Letters》 SCIE CAS CSCD 1999年第9期665-666,共2页
Mo/Si muitilayer mirrors(30 periods,doublelayer thickness 7nm)with the AZ-PF514 resist pattern whose smallest lines and spaces structure was 0.5pm were etched by reactive ion etching(RIE)in a fluorinated plasma.The et... Mo/Si muitilayer mirrors(30 periods,doublelayer thickness 7nm)with the AZ-PF514 resist pattern whose smallest lines and spaces structure was 0.5pm were etched by reactive ion etching(RIE)in a fluorinated plasma.The etch rate,selectivity and etch profile were investigated as a function of the gas mixture,pressure,and plasma rf power.The groove depth and the etch proHle were investigated by an atomic force microscope before RIE,after RIE and after resist removal. 展开更多
关键词 MO/SI smallest SELECTIVITY
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部