The effect of gamma irradiation with different doses(25–75 kGy) on TiO_2 thin films deposited by atomic layer deposition has been studied and characterized by X-ray diffraction(XRD),photoluminescence measurements,ult...The effect of gamma irradiation with different doses(25–75 kGy) on TiO_2 thin films deposited by atomic layer deposition has been studied and characterized by X-ray diffraction(XRD),photoluminescence measurements,ultraviolet–visible(UV–Vis) spectroscopy,and impedance measurements.The XRD results for the TiO_2 films indicate an enhancement of crystallization after irradiation,which can be clearly observed from the increase in the peak intensities upon increasing the gamma irradiation doses.The UV–Vis spectra demonstrate a decrease in transmittance,and the band gap of the TiO_2 thin films decreases with an increase in the gamma irradiation doses.The Nyquist plots reveal that the overall charge-transfer resistance increases upon increasing the gamma irradiation doses.The equivalent circuit,series resistance,contact resistance,and interface capacitance are measured by simulation using Z-view software.The present work demonstrates that gamma irradiation-induced defects play a major role in the modification of thestructural,electrical,and optical properties of the TiO_2 thin films.展开更多
基金supported by King Saud University,Deanship of Scientific Research,and College of Science Research Center
文摘The effect of gamma irradiation with different doses(25–75 kGy) on TiO_2 thin films deposited by atomic layer deposition has been studied and characterized by X-ray diffraction(XRD),photoluminescence measurements,ultraviolet–visible(UV–Vis) spectroscopy,and impedance measurements.The XRD results for the TiO_2 films indicate an enhancement of crystallization after irradiation,which can be clearly observed from the increase in the peak intensities upon increasing the gamma irradiation doses.The UV–Vis spectra demonstrate a decrease in transmittance,and the band gap of the TiO_2 thin films decreases with an increase in the gamma irradiation doses.The Nyquist plots reveal that the overall charge-transfer resistance increases upon increasing the gamma irradiation doses.The equivalent circuit,series resistance,contact resistance,and interface capacitance are measured by simulation using Z-view software.The present work demonstrates that gamma irradiation-induced defects play a major role in the modification of thestructural,electrical,and optical properties of the TiO_2 thin films.
