A 385 nm InGaN/GaN LED on the sapphire with the nano-pattem was fabricated and its electroluminescence property was investigated in a three-dimensional （3D） space. The experimental results showed that the luminescen...A 385 nm InGaN/GaN LED on the sapphire with the nano-pattem was fabricated and its electroluminescence property was investigated in a three-dimensional （3D） space. The experimental results showed that the luminescent intensity of the LED was obviously oriented based on the nano-pattem of the sapphire substrate. And the optical interference was used to explain the luminescence orientation of the LED on the nano-pattemed substrate.展开更多
文摘A 385 nm InGaN/GaN LED on the sapphire with the nano-pattem was fabricated and its electroluminescence property was investigated in a three-dimensional （3D） space. The experimental results showed that the luminescent intensity of the LED was obviously oriented based on the nano-pattem of the sapphire substrate. And the optical interference was used to explain the luminescence orientation of the LED on the nano-pattemed substrate.
