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Growth,Structural and Optical Characterization of Se_(75)Te_(17)Ge_8 Thin Films
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作者 SaLIm S m LaHmaR a +5 位作者 ZaYIED H salem a m SaKR G B BaRROY P TELEB N EL maRSSI m 《Journal of the Chinese Ceramic Society》 2015年第2期98-102,共5页
Se75Te17Ge8 thin film was processed on glass substrates by a pulsed laser deposition technique. The ceramic target used for the deposition was prepared by a solid state sintering method in a vacuum sealed silica tube.... Se75Te17Ge8 thin film was processed on glass substrates by a pulsed laser deposition technique. The ceramic target used for the deposition was prepared by a solid state sintering method in a vacuum sealed silica tube. The structural characterization was investigated by X-ray diffraction coupled with energy-dispersive X-ray spectrometry. The optical parameters were determined from the transmittance and reflectance spectra of the prepared film. The Wemple and Di Domenico models both were appropriate to describe the experimental results. The optical absorption coefficient was analyzed to identify the type of the optical transition and determine the corresponding energy values. 展开更多
关键词 PULSE laser DEPOSITION THIN films AMORPHOUS SEMICONDUCTORS optical spectroscopy
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