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墨竹工卡县儿童脑瘫的流行病学调查及分析 被引量:1
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作者 罗正祥 蔡世忠 +11 位作者 石磊 黄丹 陆燕华 次仁德吉 次仁多吉 吴玉姣 海桑 边巴次仁 旦增达娃 次仁卓嘎 洛桑卓嘎 吴永东 《西藏医药》 2020年第4期89-91,共3页
目的了解墨竹工卡县1~10岁脑瘫流行病学特征,为防治提供依据。方法于2019年3月~2019年6月对墨竹工卡县建制下4827儿童进行问卷调查,就脑瘫患儿的患病率、患病类型、患病因素进行总结。结果脑瘫总患病率为5.80‰(29/4827);脑瘫类型:痉挛... 目的了解墨竹工卡县1~10岁脑瘫流行病学特征,为防治提供依据。方法于2019年3月~2019年6月对墨竹工卡县建制下4827儿童进行问卷调查,就脑瘫患儿的患病率、患病类型、患病因素进行总结。结果脑瘫总患病率为5.80‰(29/4827);脑瘫类型:痉挛型15例、肌张力低下型4例;患病因素:早产6例、缺氧缺血性脑病5例、母亲先兆流产5例、核黄疸3例。结论墨竹工卡县脑瘫患儿患病率较高;最常见的类型为痉挛型;最主要的高危因素为早产。 展开更多
关键词 脑瘫 流行病学 患病率 墨竹工卡县
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Hall Effect of (Co_(0.34)Fe_(0.66))_(0.42)(SiO_(2))_(0.58) Granular Films 被引量:1
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作者 XU Qing-Yu NI Gang +2 位作者 WANG Zhi-Ming sang hai DU You-Wei 《Chinese Physics Letters》 SCIE CAS CSCD 2001年第5期672-673,共2页
TheHall Effect of(Co_(0.34)Fe_(0.66))_(0.42)(SiO_(2))_(0.58)Granular Films(volume fraction)granular films were fabricated by using magnetron sputtering technique,and a saturated Hall resistivity ρ_(xys) of about 29μ... TheHall Effect of(Co_(0.34)Fe_(0.66))_(0.42)(SiO_(2))_(0.58)Granular Films(volume fraction)granular films were fabricated by using magnetron sputtering technique,and a saturated Hall resistivity ρ_(xys) of about 29μΩ.cm was observed at room temperature,which was almost 3 orders of magnitude greater than that in the pure ferromagnetic sample.The measured linear dependence of resistivity ρ_(xx) vs log_(10)T and magnetoresistance effect indicated that the Co_(0.34)Fe_(0.66) volume fraction in the films were near percolation threshold.The giant Hall effect inHall Effect of(Co_(0.34)Fe_(0.66))_(0.42)(SiO_(2))_(0.58)Granular Films granular film may originate from percolation phenomenon. 展开更多
关键词 RESISTIVITY PERCOLATION saturated
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Giant Hall Effect of Fe_(45.51)(Al_(2)0_(3))_(54.49)Nano-granular Film
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作者 XU Qing-Yu NI Gang +1 位作者 sang hai DU You-Wei 《Chinese Physics Letters》 SCIE CAS CSCD 2000年第3期227-229,共3页
A series of Fe_(45.51)(Al_(2)0_(3))_(54.49)nano-granular films were prepared using ion-b€am sputtering technique.A saturated h^ll resistivity of about 12.5μΩ·cm at room temperature was observed.The trstnsmissio... A series of Fe_(45.51)(Al_(2)0_(3))_(54.49)nano-granular films were prepared using ion-b€am sputtering technique.A saturated h^ll resistivity of about 12.5μΩ·cm at room temperature was observed.The trstnsmission electron microscopy image showed that very small Fe particles of smaller than Inm are embedded in Al_(2)0_(3)matrix,and connected into network.The measured p-T curve indicated that this giant Hall effect may originate from the percolation phenomenon.With different annealing temperature(TA)up to 300℃,the saturated Hall resistivity decreased only a little.The good thermal stability of Fe_(45.51)(Al_(2)0_(3))_(54.49)nano-granular Films showed potential application for magnetic sensor. 展开更多
关键词 technique. RESISTIVITY saturated
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