We demonstrate monolithically integrated n-GaAs/p-Si depletion-type optical phase shifters fabricated on a 300 mm wafer-scale Si photonics platform.We measured the phase shifter performance using Mach–Zehnder modulat...We demonstrate monolithically integrated n-GaAs/p-Si depletion-type optical phase shifters fabricated on a 300 mm wafer-scale Si photonics platform.We measured the phase shifter performance using Mach–Zehnder modulators with the GaAs/Si optical phase shifters in both arms.A modulation efficiency of V_(π)L as low as 0.3 V·cm has been achieved,which is much lower compared to a carrier-depletion type Si optical phase shifter with pn junction.While propagation loss is relatively high at.5 d B∕mm,the modulator length can be reduced by the factor of.2 for the same optical modulation amplitude of a Si reference Mach–Zehnder modulator,owing to the high modulation efficiency of the shifters.展开更多
基金IMEC’s industry affiliation R&D program,National Research Foundation of KoreaMinistry of Science and ICT,South Korea(2021R1G1A1091912)。
文摘We demonstrate monolithically integrated n-GaAs/p-Si depletion-type optical phase shifters fabricated on a 300 mm wafer-scale Si photonics platform.We measured the phase shifter performance using Mach–Zehnder modulators with the GaAs/Si optical phase shifters in both arms.A modulation efficiency of V_(π)L as low as 0.3 V·cm has been achieved,which is much lower compared to a carrier-depletion type Si optical phase shifter with pn junction.While propagation loss is relatively high at.5 d B∕mm,the modulator length can be reduced by the factor of.2 for the same optical modulation amplitude of a Si reference Mach–Zehnder modulator,owing to the high modulation efficiency of the shifters.
