采用共溅射法结合后硒化成功制备出CZTSSe薄膜,主要研究了不同的硒化温度对CZTSSe薄膜与电池性能的影响。分别采用X射线衍射仪、拉曼光谱仪、扫描电子显微镜、紫外-可见-近红外分光光度计、霍尔效应测量仪及数字电源表对不同硒化温度下...采用共溅射法结合后硒化成功制备出CZTSSe薄膜,主要研究了不同的硒化温度对CZTSSe薄膜与电池性能的影响。分别采用X射线衍射仪、拉曼光谱仪、扫描电子显微镜、紫外-可见-近红外分光光度计、霍尔效应测量仪及数字电源表对不同硒化温度下制备的CZTSSe薄膜的结构、形貌、光电与太阳电池性能进行了表征与分析。结果表明,当硒化温度为580℃时,CZTSSe薄膜的结晶性最好,薄膜表面均匀致密且其电阻率和载流子浓度达到最小值和最大值,分别为1.57Ω·cm和8.2×10^(17)cm^(-3),该硒化温度下制备得到的CZTSSe太阳电池的短路电流和转换效率最高达到30.68 m A/cm^2和5.17%。相对于550℃和600℃硒化温度下的CZTSSe太阳电池,其光电转换效率分别提高了36%和6%。另外,随着硒化温度的升高,CZTSSe薄膜在XRD中的(112)峰位和Raman中的A1模式振动峰位都向小衍射角和短波数方向移动,薄膜的禁带宽度也从1.26 e V减小至1.21 e V。展开更多
A material asymmetry Co/Cu/Fe junction structure has been prepared for studying the spin-polarized electron injection at 77K.The sample performance was demonstrated to be analogous to that of a bipolar transistor.The ...A material asymmetry Co/Cu/Fe junction structure has been prepared for studying the spin-polarized electron injection at 77K.The sample performance was demonstrated to be analogous to that of a bipolar transistor.The maximal value of the output pulse voltage between Cu and Fe layers could reach the order of severalμV when the bias current between Co and Cu layers was 10μA.The interface roughness,photograph of material,magnetic loop and injection characteristic curves have been measured.Some important points on this topic have been discussed.展开更多
NiO(70 nm)/NiFeCo(5 nm)/Cu(2 nm)/NiFeCo(5 nm)spin-valve multilayers were prepared by electron beam evaporation.It is found that the magnetoresistive(MR)ratio of the as-deposited films is relatively small(about 1.6%)an...NiO(70 nm)/NiFeCo(5 nm)/Cu(2 nm)/NiFeCo(5 nm)spin-valve multilayers were prepared by electron beam evaporation.It is found that the magnetoresistive(MR)ratio of the as-deposited films is relatively small(about 1.6%)and there is no apparent biasing in MR curves of as-deposited multilayers due to weak exchange coupling.Through heat treatment at a proper temperature in a magnetic field,the exchange field of the materials increases and the multilayers show good exchange-biased spin-valve MR character with MR value reaching about 2.5%.The proper temperature range for annealing is 200-250℃.With further increasing temperature,MR ratio drops rapidly.展开更多
文摘采用共溅射法结合后硒化成功制备出CZTSSe薄膜,主要研究了不同的硒化温度对CZTSSe薄膜与电池性能的影响。分别采用X射线衍射仪、拉曼光谱仪、扫描电子显微镜、紫外-可见-近红外分光光度计、霍尔效应测量仪及数字电源表对不同硒化温度下制备的CZTSSe薄膜的结构、形貌、光电与太阳电池性能进行了表征与分析。结果表明,当硒化温度为580℃时,CZTSSe薄膜的结晶性最好,薄膜表面均匀致密且其电阻率和载流子浓度达到最小值和最大值,分别为1.57Ω·cm和8.2×10^(17)cm^(-3),该硒化温度下制备得到的CZTSSe太阳电池的短路电流和转换效率最高达到30.68 m A/cm^2和5.17%。相对于550℃和600℃硒化温度下的CZTSSe太阳电池,其光电转换效率分别提高了36%和6%。另外,随着硒化温度的升高,CZTSSe薄膜在XRD中的(112)峰位和Raman中的A1模式振动峰位都向小衍射角和短波数方向移动,薄膜的禁带宽度也从1.26 e V减小至1.21 e V。
基金Supported by the National Natural Science Foundation of China under Grant No.59731010.
文摘A material asymmetry Co/Cu/Fe junction structure has been prepared for studying the spin-polarized electron injection at 77K.The sample performance was demonstrated to be analogous to that of a bipolar transistor.The maximal value of the output pulse voltage between Cu and Fe layers could reach the order of severalμV when the bias current between Co and Cu layers was 10μA.The interface roughness,photograph of material,magnetic loop and injection characteristic curves have been measured.Some important points on this topic have been discussed.
文摘NiO(70 nm)/NiFeCo(5 nm)/Cu(2 nm)/NiFeCo(5 nm)spin-valve multilayers were prepared by electron beam evaporation.It is found that the magnetoresistive(MR)ratio of the as-deposited films is relatively small(about 1.6%)and there is no apparent biasing in MR curves of as-deposited multilayers due to weak exchange coupling.Through heat treatment at a proper temperature in a magnetic field,the exchange field of the materials increases and the multilayers show good exchange-biased spin-valve MR character with MR value reaching about 2.5%.The proper temperature range for annealing is 200-250℃.With further increasing temperature,MR ratio drops rapidly.
