The mutual interactions of stimulated Raman scattering(SRS)and stimulated four-photon mixing(SFPM)in an Er^(3+)-doped optical fiber have been studied with a tunable pulsed dye laser.Besides normal SRS and SFPM signals...The mutual interactions of stimulated Raman scattering(SRS)and stimulated four-photon mixing(SFPM)in an Er^(3+)-doped optical fiber have been studied with a tunable pulsed dye laser.Besides normal SRS and SFPM signals,we have observed some new spectral lines.Some of the new lines are attributed to three photon mixing(one from the pump,one from the first-order Stokes and one from SFPM)while the others are assigned to new SRS produced by one of the SFPM signals.The mechanisms of the generation of these new spectral lines are discussed.展开更多
Switching behaviour of polycrystalline diamond thin films is reported.Boron-doped diamond thin films were deposited by microwave plasma-assisted chemical vapor deposition on silicon substrate.Dependence of switching b...Switching behaviour of polycrystalline diamond thin films is reported.Boron-doped diamond thin films were deposited by microwave plasma-assisted chemical vapor deposition on silicon substrate.Dependence of switching behaviour on boron impurity has been investigated.The threshold voltage obviously decreases with increasing content of boron dopant.展开更多
文摘The mutual interactions of stimulated Raman scattering(SRS)and stimulated four-photon mixing(SFPM)in an Er^(3+)-doped optical fiber have been studied with a tunable pulsed dye laser.Besides normal SRS and SFPM signals,we have observed some new spectral lines.Some of the new lines are attributed to three photon mixing(one from the pump,one from the first-order Stokes and one from SFPM)while the others are assigned to new SRS produced by one of the SFPM signals.The mechanisms of the generation of these new spectral lines are discussed.
文摘Switching behaviour of polycrystalline diamond thin films is reported.Boron-doped diamond thin films were deposited by microwave plasma-assisted chemical vapor deposition on silicon substrate.Dependence of switching behaviour on boron impurity has been investigated.The threshold voltage obviously decreases with increasing content of boron dopant.
