In order to enhance the p-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field(B-LBSF) was successfully fabricated in this work. Through boron dopin...In order to enhance the p-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field(B-LBSF) was successfully fabricated in this work. Through boron doping in the LBSF, much higher doping concentration was observed for the B-LBSF over the Al-LBSF. Higher doping concentration in the LBSF is expected to lead to better rear passivation and lower rear contact resistance. Based on one thousand pieces of solar cells for each type, it was found that the rear passivated crystalline silicon solar cells with B-LBSF showed statistical improvement in their photovoltaic properties over those with Al-LBSF.展开更多
基金Funded by the National Natural Science Foundation of China(61366004)the Research Fund for the Doctoral Program of Higher Education(20123601110006)the Jiangxi Provincial Department of Education(KJLD13008)
文摘In order to enhance the p-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field(B-LBSF) was successfully fabricated in this work. Through boron doping in the LBSF, much higher doping concentration was observed for the B-LBSF over the Al-LBSF. Higher doping concentration in the LBSF is expected to lead to better rear passivation and lower rear contact resistance. Based on one thousand pieces of solar cells for each type, it was found that the rear passivated crystalline silicon solar cells with B-LBSF showed statistical improvement in their photovoltaic properties over those with Al-LBSF.