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Enhanced Photovoltaic Properties for Rear Passivated Crystalline Silicon Solar Cells by Fabricating Boron Doped Local Back Surface Field 被引量:1
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作者 陈楠 shen shuiliang 杜国平 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2017年第6期1323-1328,共6页
In order to enhance the p-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field(B-LBSF) was successfully fabricated in this work. Through boron dopin... In order to enhance the p-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field(B-LBSF) was successfully fabricated in this work. Through boron doping in the LBSF, much higher doping concentration was observed for the B-LBSF over the Al-LBSF. Higher doping concentration in the LBSF is expected to lead to better rear passivation and lower rear contact resistance. Based on one thousand pieces of solar cells for each type, it was found that the rear passivated crystalline silicon solar cells with B-LBSF showed statistical improvement in their photovoltaic properties over those with Al-LBSF. 展开更多
关键词 crystalline silicon solar cells rear passivation local back surface field dopingconcentration
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