Mapping of powdery mildew resistance genes transferred to common wheat from wild emmer wheat revealed three functional Pm60 haplotypes

Powdery mildew(PM),caused by Blumeria graminis f.sp.tritici(Bgt),is one of the destructive wheat diseases worldwide.Wild emmer wheat(Triticum turgidum ssp.dicoccoides,WEW),a tetraploid progenitor of common wheat,is a valuable genetic resource for wheat disease resistance breeding programs.We developed three hexaploid pre-breeding lines with PM resistance genes derived from three WEW accessions.These resistant pre-breeding lines were crossed with susceptible common wheat accessions.Segregations in the F2populations were 3 resistant:1 susceptible,suggesting a single dominant allele in each resistant parent.Mapping of the resistance gene in each line indicated a single locus on the long arm of chromosome 7A,at the approximate location of previously cloned Pm60 from T.urartu.Sanger sequencing revealed three different Pm60 haplotypes(Hap 3,Hap 5,and Hap 6).Co-segregating diagnostic markers were developed for identification and selection of each haplotype.The resistance function of each haplotype was verified by the virus-induced gene silencing(VIGS).Common wheat lines carrying each of these Pm60 haplotypes were resistant to most Bgt isolates and differences in the response arrays suggested allelic variation in response.

Negative magnetoresistance in the antiferromagnetic semimetal V_(1/3)TaS_(2)

Intercalated transition metal dichalcogenides(TMDCs)attract much attention due to their rich properties and potential applications.In this article,we grew successfully high-quality V_(1/3)TaS_(2) crystals by a vapor transport method.We measured the magnetization,longitudinal resistivityρxx(T,H),Hall resistivityρxy(T,H),as well as performed calculations of the electronic band structure.It was found that V_(1/3)TaS_(2) is an A-type antiferromagnet with the Neel temperature T_(N)=6.20 K,and exhibits a negative magnetoresistance(MR)near T_(N).Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.

An Environment-Friendly High-Performance Aqueous Mg-Na Hybrid-Ion Battery Using an Organic Polymer Anode

Aqueous Mg ion batteries(AMIBs)show great potential in energy storage for their advantages of high capacity,abundant resource,and environmental friendliness.However,the development of AMIBs is limited due to the scarcity of suitable anode materials.In this study,a new polymer anode material(PNTAQ)with flower-like nanosheet structure is synthesized for aqueous Mg-Na hybrid-ion battery(AMNHIB).PNTAQ possess carbonyl functional groups which can be oxidized and reduced reversibly in aqueous solution containing alkaline metal ions.PNTAQ displays a discharge specific capacity of 245 mAh g^(−1)at 50 mA g^(−1)in 1 M MgCl_(2)+0.5 M NaCl electrolyte,which is much higher than that in single 1 M MgCl_(2)or 0.5 M NaCl electrolyte.Even cycling at 1000 mA g^(−1)for 1000 times,the capacity retention can still maintain at 87.2%.A full Mg-Na hybrid-ion cell is assembled by employingβ-MnO_(2)as cathode and PNTAQ as anode material,it exhibits a specific capacity of 91.6 mAh g^(−1)at 100 mA g^(−1).The polymer electrode material well maintains its framework structure during the discharge/charge cycling process of the hybrid-ion battery.

含双二氮杂萘酮结构聚芳醚酮热塑性树脂的合成与性能

以4,4’-双(氧基(1,4-苯撑))-双二氮杂萘-1(2H)酮-二苯醚(OBDHPZ)、4,4’-二氟二苯砜(DFS)和4,4’-二氟二苯酮(DFK)为单体,采用高温溶液缩聚法,通过调节DFK的含量,合成一系列含双二氮杂萘酮联苯结构聚芳醚酮(PBPESKs)热塑性树脂。通过核磁共振氢谱、红外光谱及元素分析表明所合成的聚合物结构与设计结构一致。PBPESKs系列聚合物的玻璃化转变温度在298~324℃之间,5%热失重温度在512~517℃之间,同时PBPESKs树脂在NMP、DMAc、氯仿等极性有机溶剂中具有良好的溶解性,并通过溶液浇筑制膜,PBPESKs聚合物薄膜的拉伸模量在1.85~1.92GPa之间,断裂伸长率在12.6%~13.9%之间。

养猪场户如何做好非洲猪瘟的防控

非洲猪瘟是一种急性、热性、高度接触性传染病[1],近两年来给我国养猪业带来了灾难性的影响。因此,在当前阶段做好现有养猪场户的防控工作尤为重要。文章结合我国养猪特点和防控形势,从养猪从业者角度介绍了非洲猪瘟的特点、传播方式、综合防控措施及防疫职责,以期为广大生猪养殖者做好非洲猪瘟防控提供参考。

外源亚精胺对Cd胁迫下水稻种子萌发的影响

农田Cd污染对农作物生长有毒害作用,导致农作物产量降低、品质下降。为了缓解农作物Cd毒害,研究外源添加亚精胺(Spd)对Cd胁迫下水稻种子萌发和幼苗生长的影响,结果表明,30μmol·L^(−1) Cd胁迫下外源添加1000μmol·L^(−1) Spd能够促进水稻种子的萌发过程,提高种子的发芽势和发芽率,促进水稻根系生长。添加Spd可以显著地降低水稻幼芽和根系中的丙二醛(MDA)含量,不同程度地提高Cd胁迫下水稻幼苗和根系中的抗氧化酶系统过氧化氢酶(CAT)、过氧化物酶(POD)和超氧化物歧化酶(SOD)的活性。当Cd浓度为30μmol·L^(−1)时,添加500μmol·L^(−1) Spd和1000μmol·L^(−1) Spd使水稻根系中的MDA含量比对照处理分别降低55.8%和66.9%,水稻根系CAT活性分别提高50.1%和72.6%,水稻幼芽POD活性分别提高175.5%和185.5%。Spd可以有效地缓解Cd对水稻的氧化胁迫作用,提高水稻种子的抗逆能力,促进水稻的萌发过程。

Lineage Diversification and Niche Evolution in the Chinese Cobra Naja atra (Elapidae)

Theroleof nicheevolution(niche conservatism or niche divergence)in lineage diversification is a poorly studied area.The Chinese cobra Naja atra(Elapidae)has diverged into three lineages:Lineage E in eastern China,Lineage S in southern China and Vietnam,and Lineage W in western China.However,whether the ecological niche is conserved or divergent among these three lineages is unknown.In the present study,we used ecological niche models in geographical space to study the ecological differences among lineages.We compared the niche overlap in environmental space to test niche conservatism and niche divergence.Our results showed that the three lineages of N.atra shared an ecological niche space between Lineages E and S/W,with the climatic niches of Lineages S and W representing a specialized fraction of the climatic niche of Lineage E.We speculated that the niche divergence between Lineages S and W was a consequence of geographical barriers limitinggeneflow.Ourstudyprovides evidence for lineage diversification associated with both geographical isolation and climatic niche evolution,suggesting that early niche divergence between Lineages S and W,followed by niche conservatism,causes niche divergence among lineages.

沙蓬(Agriophyllum squarrosum)根际固氮菌群落结构特征

为了解固沙先锋植物沙蓬不同发育阶段根际固氮菌群落结构特征,以库布齐沙漠幼苗期、营养生长期、生殖生长期和立枯期沙蓬根际土壤为研究对象,通过高通量测序分析不同发育阶段固氮菌群落组成和多样性,通过冗余分析分析固氮菌群落与土壤养分的相关性。结果表明:β-变形菌纲和广泛固氮氢自养单胞菌属为沙蓬根际的主要固氮菌类群,具有生长迅速和自养的特点,丰度分别为44.30%~90.51%和35.05%~72.89%。沙蓬不同发育阶段根际固氮菌群落具有显著性差异,属水平的差异固氮菌分别为广泛固氮氢自养单胞菌属、斯克尔曼氏菌属和慢生根瘤菌属。营养生长期,与有机质、中性磷酸酶和中性蛋白酶活性呈显著正相关的斯克尔曼氏菌属明显高于幼苗期(2.76倍)、生殖生长期(4.22倍)和立枯期(3.13倍);生殖生长期,与有机质、中性磷酸酶、速效磷和过氧化氢酶活性呈显著负相关的慢生根瘤菌属明显高于幼苗期(3.56倍)和立枯期(8.58倍),在营养生长期未出现。幼苗期和营养生长期参与碳循环的有机质和蔗糖酶活性显著升高,参与氮循环的速效氮、脲酶和中性蛋白酶活性显著升高,生殖生长期根际养分显著下降。综上,沙蓬不同发育阶段根际固氮菌群落具有显著差异,幼苗期和营养生长期的固氮菌以蓄积碳、氮源为主,生殖生长期以消耗养分为主,促进了根际固氮菌营养竞争性演替,为沙地、沙漠固沙先锋植物种群恢复以及沙产业氮肥施用措施提供理论基础。

巧妙的稀掺杂策略实现高性能GeTe热电材料

In thermoelectrics,doping is essential to augment the figure of merit.Traditional strategy,predomina ntly heavy doping,aims to optimize carrier concentration and restrain lattice thermal conductivity.However,this tactic can severely hamper carrier transport due to pronounced point defect scattering,particularly in materials with inherently low carrier mean-free-path.Conversely,dilute doping,although minimally affecting carrier mobility,frequently fails to optimize other vital thermoelectric parameters.Herein,we present a more nuanced dilute doping strategy in GeTe,leveraging the multifaceted roles of small-size metal atoms.A mere 4%CuPbSbTe_(3)introduction into GeTe swiftly suppresses rhombohedral distortion and optimizes carrier concentration through the aid of Cu interstitials.Additionally,the formation of multiscale microstructures,including zero-dimensional Cu interstitials,one-dimensional dislocations,two-dimensional planar defects,and three-dimensional nanoscale amorphous GeO_(2)and Cu_(2)GeTe_(3)precipitates,along with the ensuing lattice softening,contributes to an ultralow lattice thermal conductivity.Intriguingly,dilute CuPbSbTe_(3)doping incurs only a marginal decrease in carrier mobility.Subsequent trace Cd doping,employed to alleviate the bipolar effect and align the valence bands,yields an impressive figure-of-merit of 2.03 at 623 K in(Ge_(0.97)Cd_(0.03)Te)_(0.96)(CuPbSbTe_(3))_(0.04).This leads to a high energyconversion efficiency of 7.9%and a significant power density of 3.44 W cm^(-2)at a temperature difference of 500 K.These results underscore the invaluable insights gained into the constructive role of nuanced dilute doping in the concurrent tuning of carrier and phonon transport in GeTe and other thermoelectric materials.

熵工程提高(GeTe)_(x)(AgSb_(0.5)Bi_(0.5)Te_(2))_(1-x)的热电性能和显微硬度

作为一种材料基因特性的内禀属性,构型熵是材料基因组中一个新兴的指征因子.设计具有高构型熵的多组元热电材料,可以通过严重的晶格畸变显著降低晶格热导率,并通过提高晶体对称性改善塞贝克系数.然而,高构型熵也造成了载流子迁移率的恶化,从而限制了zT值的改善.本文通过在众所周知的(GeTe)_(1-x)(AgSbTe_(2))_(x),即TAGS合金中用Bi取代一半的Sb,设计了(GeTe)_(1-x)(AgSb_(0.5)Bi_(0.5)Te_(2))_(x),又称TABGS合金,以证明熵工程的有效性.鉴于TAGS合金的载流子平均自由程较低,已接近Mott-Ioffe-Regel极限,进一步的Bi置换和构型熵增加不会再损害载流子迁移率.此外,通过高构型熵抑制菱方-立方相变和降低的载流子浓度有助于大幅提高Seebeck系数.而且,AgSb_(0.5)Bi_(0.5)Te_(2)合金化诱导的多尺度微观结构和减小的声速有效地抑制了晶格热导率.因此,(GeTe)_(0.80)(AgSb_(0.5)Bi_(0.5)Te_(2))_(0.20)的最高zT值在723 K达到了1.60,300到773 K之间的平均zTave值达到了1.23.同时,由于固溶硬化其室温维氏硬度达到了2.21 GPa.这些结果强调了熵工程在提高热电性能方面的有效性,特别是对大量具有本征低载流子迁移率的材料而言.

Phase-separated nucleocapsid protein of SARS-CoV-2 suppresses cGAS-DNA recognition by disrupting cGAS-G3BP1 complex

Currently,the incidence and fatality rate of SARS-CoV-2 remain continually high worldwide.COVID-19 patients infected with SARS-CoV-2 exhibited decreased type I interferon(IFN-I)signal,along with limited activation of antiviral immune responses as well as enhanced viral infectivity.Dramatic progresses have been made in revealing the multiple strategies employed by SARS-CoV-2 in impairing canonical RNA sensing pathways.However,it remains to be determined about the SARS-CoV-2 antagonism of cGAS-mediated activation of IFN responses during infection.In the current study,we figure out that SARS-CoV-2 infection leads to the accumulation of released mitochondria DNA(mtDNA),which in turn triggers cGAS to activate IFN-I signaling.As countermeasures,SARS-CoV-2 nucleocapsid(N)protein restricts the DNA recognition capacity of cGAS to impair cGAS-induced IFN-I signaling.Mechanically,N protein disrupts the assembly of cGAS with its co-factor G3BP1 by undergoing DNA-induced liquid-liquid phase separation(LLPS),subsequently impairs the double-strand DNA(dsDNA)detection ability of cGAS.Taken together,our findings unravel a novel antagonistic strategy by which SARS-CoV-2 reduces DNA-triggered IFN-I pathway through interfering with cGAS-DNA phase separation.

Inhibiting the bipolar effect via band gap engineering to improve the thermoelectric performance in n-type Bi_(2-x)Sb_(x)Te_(3)for solid-state refrigeration

To date,the benchmark Bi_(2)Te_(3)-based alloys are still the only commercial material system used for ther-moelectric solid-state refrigeration.Nonetheless,the conspicuous performance imbalance between the p-type Bi_(2-x)Sb_(x)Te_(3)and n-type Bi_(2)Te_(3-x)Se_(x) legs has become a major obstacle for the improvement of cooling devices to achieve higher efficiency.In our previous study,novel n-type Bi_(2-x)Sb_(x)Te_(3)alloy has been pro-posed via manipulating donor-like effect as an alternative to mainstream n-type Bi_(2)Te_(3-x)Se_(x).However,the narrow bandgap of Bi_(2-x)Sb_(x)Te_(3)provoked severe bipolar effect that constrained the further improvement of zT near room temperature.Herein,we have implemented band gap engineering in n-type Bi_(1.5)Sb_(0.5)Te_(3)by employing isovalent Se substitution to inhibit the undesired intrinsic excitation and achieve the dis-tinguished room-temperature zT.First,the preferential occupancy of Se at Te^(2)site appropriately enlarges the band gap,thereby concurrently improving the Seebeck coefficient and depressing the bipolar thermal conductivity.In addition,the Se alloying mildly suppresses the compensation mechanism and essentially preserves the already optimized carrier concentration,which maintains the peak zT near room tempera-ture.Moreover,the large strain field and mass fluctuation generated by Se alloying leads to the remark-able reduction of lattice thermal conductivity.Accordingly,the zT value of Bi_(1.5)Sb_(0.5)Te_(2.8)Se_(0.2)reaches 1.0 at 300 K and peaks 1.1 at 360 K,which surpasses that of most well-known room-temperature n-type thermoelectric materials.These results pave the way for n-type Bi_(2-x)Sb_(x)Te_(3)alloys to become a new and promising top candidate for large-scale solid-state cooling applications.

Boosting fast interfacial Li^(+)transport in solid-state Li metal batteries via ultrathin Al buffer layer

Na superionic conductor(NASICON)-type Li_(1.5)Al_(0.5)Ge_(0.5)P_(3)O_(12)(LAGP)solid state electrolytes(SSEs)have attracted significant interests thanks to the prominent ionic conductivity(>10^(–4)S·cm^(–1))at room temperature and superb stability in air.Unfortunately,its application has been hindered by the lithium dendrites and the intrinsic interfacial instability of LAGP towards metallic Li,etc.Herein,by magnetron sputtering(MS),an ultrathin Al film is deposited on the surface of the LAGP pellet(Al-LAGP).By in-situ alloying reaction,the spontaneously formed LiAl buffer layer inhibits the side reaction between LAGP SSEs and Li metal,induces the uniform distribution of interfacial electric field as well.Density functional theory(DFT)calculations demonstrate that the LiAl alloy surface promotes the diffusion of lithium atoms due to the lower energy barrier,thereby inhibiting the formation of lithium dendrites.Consequently,the Li/Al-LAGP-Al/Li symmetric cells show a low resistance of 210Ωand a durable lifespan over 1,200 h at a high current density of 0.1 mA·cm^(-2).Assembled all solid state lithium metal batteries(ASSLMBs)with LiFePO_(4)(LFP)cathode significantly improve cycle stability and rate performance,proving a promising stabilization strategy towards the NASIOCN type electrolyte/anode interface in solid state Li metal batteries.

Refining acceptor aggregation in nonfullerene organic solar cells to achieve high efficiency and superior thermal stability

With the rapid increase in photoelectric conversion efficiency of organic photovoltaics(OPVs),prolonging the operational lifetime of devices becomes one of the critical prerequisites for commercial applications.Guided by the theoretical calculations of molecular stacking and miscibility,we proposed an effective approach to simultaneously improve device performance and thermal stability of high-efficiency OPVs by refining the aggregation of Y-series acceptors.The key to this approach is deliberately designing an asymmetric Y-series acceptor,named Y6-CNO,which acts as a third component regulator to finely tune the degree of acceptor aggregation and crystallization in the benchmark PM6:Y6-BO system.Strikingly,a champion photovoltaic efficiency of 18.0%was achieved by introducing 15 wt%Y6-CNO into the PM6:Y6-BO system,significantly higher than the control binary cell(16.7%).Moreover,annealing at 100°C for over 1,200 h does not markedly affect the photovoltaic performance of the optimal ternary devices,maintaining above 95%of the initial performance and exhibiting an exceptionally high T_(80)lifetime of 9,000 h under continuous thermal annealing.By contrast,binary devices suffer from excessive crystallization of acceptors with long-term annealing.Additionally,mixing thermodynamics combined with morphological characterizations were employed to elucidate the microstructure-thermal stability relationships.The ternary OPVs consisting of symmetric and asymmetric homologous acceptors form better charge transport channels and can effectively suppress excessive aggregation of acceptors under long-term annealing.This work demonstrates the effectiveness of refining acceptor aggregation via molecular design for highly efficient and stable nonfullerene-based OPVs.

The MKK3–MPK7 cascade phosphorylates ERF4 and promotes its rapid degradation to release seed dormancy in Arabidopsis

Seeds establish dormancy to delay germination until the arrival of a favorable growing season.In this study,we identify a fate switch comprised of the MKK3–MPK7 kinase cascade and the ethylene response factor ERF4 that is responsible for the seed state transition from dormancy to germination.We show that dormancy-breaking factors activate the MKK3–MPK7 module,which affects the expression of some a-EXPANSIN(EXPA)genes to control seed dormancy.Furthermore,we identify a direct downstream substrate of this module,ERF4,which suppresses the expression of these EXPAs by directly binding to the GCC boxes in their exon regions.The activated MKK3–MPK7 module phosphorylates ERF4,leading to its rapid degradation and thereby releasing its inhibitory effect on the expression of these EXPAs.Collectively,our work identifies a signaling chain consisting of protein phosphorylation,degradation,and gene transcription,by which the germination promoters within the embryo sense and are activated by germination signals from ambient conditions.

Phase evolution mechanism study and fabrication of PbMo_(6)S_(8) superconducting materials with two-step sintering process

PbMo6S 8 superconducting materials are considered to have great potential for practical applications at low temperatures and high fields due to their high upper critical field,low anisotropy,and low preparation cost.In this work,PbMo_(6)S_(8) bulks were prepared through a solid‐state sintering process using PbS,Mo,and MoS_(2) as raw materials.The phase evolution mechanism during the sintering of PbMo_(6)S_(8) was studied in detail.It was found that during sintering at 750℃ for 24 h,both the S and Pb atoms diffuse into the Mo and MoS_(2) particles,leading to the formation of the PbMo_(6)S_(8) phase.After sintering at 950℃ for 72 h,a high superconducting phase content was obtained in the bulk;however,numerous pores remained.Therefore,in order to obtain a higher density for the bulk,a two‐step sintering process was developed.Based on this technique,PbMo_(6)S_(8) bulks with a higher bulk density and a higher superconducting phase content were obtained.This study provides an effective method for the fabrication of high‐quality precursor powders,which can be the foundation for the future fabrication of PbMo_(6)S_(8) superconducting long wires or tapes for practical applications.

多功能锂硫电池隔膜

锂硫电池具有远超锂离子电池的高理论比容量(1675 mAh·g^(-1)),并且兼具硫资源丰富、生产成本低廉以及环境友好等优势。然而,多硫离子的穿梭效应造成金属锂负极钝化、引起电池容量和库仑效率下降、循环稳定性变差等严重问题,限制锂硫电池的实际应用。从正极和负极之间的隔膜层出发,引入多硫离子穿梭的阻挡层被认为是极为有效的研究策略。这些研究策略在缓解多硫离子穿梭、提高活性物质利用效率、延长循环寿命和循环稳定性方面具有显著效果。本文分类综述了近年来锂硫电池隔膜功能化的研究进展,并对未来隔膜功能化的研究趋势进行了预测。

有机电极材料固定化策略

有机电极材料因其理论比容量高、低成本、环境友好以及分子结构可设计性强等特点,有望成为下一代可持续和多功能能量储存设备的有效电极材料。然而,根据"相似相溶"原理,该类材料极易溶解在有机电解液中,导致电池容量衰减快、循环稳定性和倍率性能也较差。目前已有许多研究致力于通过"固定化"过程解决有机电极材料的溶解问题。本综述针对有机电极材料的固定化策略展开评述,介绍了有机电极材料的固定化机理,以及各种固定化策略在不同种类有机电极材料中所起的作用,指出了有机电极材料面临的挑战,并对未来的研究和改进方向进行展望。

Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method

β-GaOis an ultra-wide band-gap semiconductor with promising applications in UV optical detectors,Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-GaOcrystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-GaOsingle crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-GaOcrystals were investigated systematically.

Efficient emission of InGaN-based light-emitting diodes:toward orange and red

Indium gallium nitride(InGaN)-based light-emitting diodes(LEDs)are considered a promising candidate for red-green-blue(RGB)micro displays.Currently,the blue and green LEDs are efficient,while the red ones are inefficient for such applications.This paper reports our work of creating efficient InGaN-based orange and red LEDs on silicon(111)substrates at low current density.Based on the structure of InGaN yellow LEDs,by simply reducing the growth temperature of all the yellow quantum wells(QWs),we obtained 599 nm orange LEDs with peak wall-plug efficiency(WPE)of 18.1%at 2 A/cm^2.An optimized QW structure was proposed that changed two of the nine yellow QWs to orange ones.Compared with the sample containing nine orange QWs,the sample with two orange QWs and seven yellow QWs showed similar emission spectra but a much higher peak WPE up to 24.0%at 0.8 A/cm^2 with a wavelength of 608 nm.The improvement of peak WPE can be attributed to the improved QW quality and the reduced active recombination volume.Subsequently,a series of efficient InGaN-based orange and red LEDs was demonstrated.With further development,the InGaN-based red LEDs are believed to be attainable and can be used in micro LED displays.