针对航空甚高频(Very High Frequency,VHF)通信设备,提出了一种具有低插入损耗、高限幅性能的电磁防护模块电路设计方法。在无源多级限幅器设计基础上外加直流偏置,构建了一款有源式防护模块以提高限幅能力。将定向耦合器与整流电路相结...针对航空甚高频(Very High Frequency,VHF)通信设备,提出了一种具有低插入损耗、高限幅性能的电磁防护模块电路设计方法。在无源多级限幅器设计基础上外加直流偏置,构建了一款有源式防护模块以提高限幅能力。将定向耦合器与整流电路相结合,提出了以整流部分干扰信号代替外加直流偏置的方式,进一步优化设计了一款半有源式防护模块。对所设计的2款电磁防护模块进行实物加工与测试,结果表明,在118~136 MHz的航空VHF频段内,插入损耗均小于1.5 dB,起限电平小于6 dBm,限幅电平小于8 dBm,功率容量不小于25 dBm。相比于其他同类型防护模块,起限电平和限幅电平明显降低,能够有效提高防护能力。展开更多
The strain effects of the Zn1-xMgxO substrate on the bands structure of wurtzite Nb-doped Zn O bulk materials have been investigated using fi rst-principles calculations based on density functional theory. Firstly, th...The strain effects of the Zn1-xMgxO substrate on the bands structure of wurtzite Nb-doped Zn O bulk materials have been investigated using fi rst-principles calculations based on density functional theory. Firstly, the band gap increases gradually with increasing Nb contents in unstrained Nb-doped Zn O, which is consistent with the experimental results. Secondly, the band gap decreases with increasing substrate stress in Nb-doped Zn O/Zn1-xMgxO. Splitting energies between HHB(Heavy Hole Band) and LHB(Light Hole Band), HHB and CSB(Crystal Splitting Band) in Zn0.9167Nb0.0833O/Zn1-xMgxO almost remain unchanged with increasing substrate stress, while decrease slightly in Zn0.875Nb0.125O/Zn1-xMgxO. In addition, detailed analysis of the strain effects on the effective masses of electron and hole in Nb-doped Zn O/Zn1-xMgxO is also given.展开更多
基金Funded by the National Natural Science Foundation of China(Nos.61334003,61162025,60776034)
文摘The strain effects of the Zn1-xMgxO substrate on the bands structure of wurtzite Nb-doped Zn O bulk materials have been investigated using fi rst-principles calculations based on density functional theory. Firstly, the band gap increases gradually with increasing Nb contents in unstrained Nb-doped Zn O, which is consistent with the experimental results. Secondly, the band gap decreases with increasing substrate stress in Nb-doped Zn O/Zn1-xMgxO. Splitting energies between HHB(Heavy Hole Band) and LHB(Light Hole Band), HHB and CSB(Crystal Splitting Band) in Zn0.9167Nb0.0833O/Zn1-xMgxO almost remain unchanged with increasing substrate stress, while decrease slightly in Zn0.875Nb0.125O/Zn1-xMgxO. In addition, detailed analysis of the strain effects on the effective masses of electron and hole in Nb-doped Zn O/Zn1-xMgxO is also given.