We present a first-principles study of the effects of hydrogen on helium behavior in hcp titanium.The calculation indicates that the dissolved H atoms in hcp Ti change the formation energy of the interstitial He atom,...We present a first-principles study of the effects of hydrogen on helium behavior in hcp titanium.The calculation indicates that the dissolved H atoms in hcp Ti change the formation energy of the interstitial He atom,but they do not change the energetically favorable occupying site of the He atom,i.e.,the tetrahedral site is more favorable than the octahedral site.The impacts of H on the formation of interstitial He defects are directly related to the atomic environment around H atoms and their positions relative to interstitial He atoms as well.For He diffusion,a tetrahedral interstitial He atom can more easily migrate along the indirect tetrahedron-octahedron-tetrahedron path than the direct path of tetrahedron-tetrahedron.When a H atom exists in the first neighbor octahedral site from the He,the activation energy for He atom diffusion is 0.46eV,which is higher than that of the He atom diffusion in perfect crystal,0.41 eV.Increasing the number of H atoms to two,He diffusion needs much higher activation energy.This suggests that the H atoms around interstitial He may impede the migration of interstitial He atom in hcp Ti.展开更多
We prepare p-type ZnO:N films by annealing Zn_(3)N_(2) films in oxygen over a range of temperatures.The prepared films are characterized by various techniques,such as Rutherford backscattering spectroscopy,x-ray diffr...We prepare p-type ZnO:N films by annealing Zn_(3)N_(2) films in oxygen over a range of temperatures.The prepared films are characterized by various techniques,such as Rutherford backscattering spectroscopy,x-ray diffraction,x-ray photoemission spectroscopy,the Hall effect and photoluminescence spectra.The results show that the Zn_(3)N_(2) films start to transform to ZnO at 300℃ and the N content decreases with an increase in annealing temperature.N has two local chemical states:zinc oxynitride(ZnO_(1-x)N_(x))and substitutional NO in O-rich local environments(α-NO).The conduction type changes from n-type to p-type upon oxidation at 400-600℃,indicating that N is an effective acceptor in the ZnO film.The photoluminescence spectra show the UV emission and defect-related emissions of ZnO:N films.The mechanism and efficiency of p-type doping are briefly discussed.展开更多
Helium contents of up to 30at.% are prepared in sputter-deposited Ti films.Isochronal annealing behaviors of helium including the depth profiles and the evolution of helium bubbles in the films at different temperatur...Helium contents of up to 30at.% are prepared in sputter-deposited Ti films.Isochronal annealing behaviors of helium including the depth profiles and the evolution of helium bubbles in the films at different temperatures are examined by ion beam analysis including Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA),as well as thermal helium desorption spectroscopy (THDS).It is found that the energy spreading induced by structural inhomogeneities in the spectra of RBS and ERDA as well as the increment in the width of spectra occurs,which corresponds to the change of stopping cross-section of helium atoms in the Ti film due to the change of physical-state of helium in the evolution of helium bubble.The ion beam analysis on the helium evolution is consistent with the THDS measurement.Ion beam technique opens interesting possibilities in the characterizing on the growth of helium bubbles.展开更多
Various helium-containing titanium films were deposited on Si substrates by magnetron sputtering under different helium/argon (He/Ar) ambiances.Helium concentrations and corresponding depth profiles in the Ti films ar...Various helium-containing titanium films were deposited on Si substrates by magnetron sputtering under different helium/argon (He/Ar) ambiances.Helium concentrations and corresponding depth profiles in the Ti films are obtained by elastic recoil detection analysis (ERDA).X-ray diffraction (XRD) measurements are carried out to evaluate the crystallization of the titanium films.Vacancy-type defects and their depth profiles were revealed by slow positron beam analysis (SPBA).It is found that the defect-characteristic parameter S rises with the increment of the He/Ar flow ratios.The variation of S indicates the formation and evolution of various Herelated defects,with uniform distribution into the depth around 400nm.展开更多
Helium-containing titanium films were prepared on Si substrates with various biases applied by magnetron sputtering under stable He/Ar ambiance.Rutherford backscattering and elastic recoil detection analyses are used ...Helium-containing titanium films were prepared on Si substrates with various biases applied by magnetron sputtering under stable He/Ar ambiance.Rutherford backscattering and elastic recoil detection analyses are used to measure the thickness of the He-Ti films and the helium depth profile,respectively.Experiments of x-ray diffraction and variable energy positron annihilation spectroscopy are carried out to investigate the microstructures of titanium films and the corresponding helium-related defects developed.The behavior of the implanted He,the microstructure of the He-Ti film and the formation of He-related defects all are affected by the substrate biases applied.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 10975035.
文摘We present a first-principles study of the effects of hydrogen on helium behavior in hcp titanium.The calculation indicates that the dissolved H atoms in hcp Ti change the formation energy of the interstitial He atom,but they do not change the energetically favorable occupying site of the He atom,i.e.,the tetrahedral site is more favorable than the octahedral site.The impacts of H on the formation of interstitial He defects are directly related to the atomic environment around H atoms and their positions relative to interstitial He atoms as well.For He diffusion,a tetrahedral interstitial He atom can more easily migrate along the indirect tetrahedron-octahedron-tetrahedron path than the direct path of tetrahedron-tetrahedron.When a H atom exists in the first neighbor octahedral site from the He,the activation energy for He atom diffusion is 0.46eV,which is higher than that of the He atom diffusion in perfect crystal,0.41 eV.Increasing the number of H atoms to two,He diffusion needs much higher activation energy.This suggests that the H atoms around interstitial He may impede the migration of interstitial He atom in hcp Ti.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10775033 and 11075038.
文摘We prepare p-type ZnO:N films by annealing Zn_(3)N_(2) films in oxygen over a range of temperatures.The prepared films are characterized by various techniques,such as Rutherford backscattering spectroscopy,x-ray diffraction,x-ray photoemission spectroscopy,the Hall effect and photoluminescence spectra.The results show that the Zn_(3)N_(2) films start to transform to ZnO at 300℃ and the N content decreases with an increase in annealing temperature.N has two local chemical states:zinc oxynitride(ZnO_(1-x)N_(x))and substitutional NO in O-rich local environments(α-NO).The conduction type changes from n-type to p-type upon oxidation at 400-600℃,indicating that N is an effective acceptor in the ZnO film.The photoluminescence spectra show the UV emission and defect-related emissions of ZnO:N films.The mechanism and efficiency of p-type doping are briefly discussed.
基金Supported by the National Natural Science Foundation of China under Grant No 10975035the Special Project for ITER of China under Grant No 2010GB104002.
文摘Helium contents of up to 30at.% are prepared in sputter-deposited Ti films.Isochronal annealing behaviors of helium including the depth profiles and the evolution of helium bubbles in the films at different temperatures are examined by ion beam analysis including Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA),as well as thermal helium desorption spectroscopy (THDS).It is found that the energy spreading induced by structural inhomogeneities in the spectra of RBS and ERDA as well as the increment in the width of spectra occurs,which corresponds to the change of stopping cross-section of helium atoms in the Ti film due to the change of physical-state of helium in the evolution of helium bubble.The ion beam analysis on the helium evolution is consistent with the THDS measurement.Ion beam technique opens interesting possibilities in the characterizing on the growth of helium bubbles.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10775102 and 10775101.
文摘Various helium-containing titanium films were deposited on Si substrates by magnetron sputtering under different helium/argon (He/Ar) ambiances.Helium concentrations and corresponding depth profiles in the Ti films are obtained by elastic recoil detection analysis (ERDA).X-ray diffraction (XRD) measurements are carried out to evaluate the crystallization of the titanium films.Vacancy-type defects and their depth profiles were revealed by slow positron beam analysis (SPBA).It is found that the defect-characteristic parameter S rises with the increment of the He/Ar flow ratios.The variation of S indicates the formation and evolution of various Herelated defects,with uniform distribution into the depth around 400nm.
基金by the National Natural Science Foundation of China under Grant Nos 10775102 and 10775101.
文摘Helium-containing titanium films were prepared on Si substrates with various biases applied by magnetron sputtering under stable He/Ar ambiance.Rutherford backscattering and elastic recoil detection analyses are used to measure the thickness of the He-Ti films and the helium depth profile,respectively.Experiments of x-ray diffraction and variable energy positron annihilation spectroscopy are carried out to investigate the microstructures of titanium films and the corresponding helium-related defects developed.The behavior of the implanted He,the microstructure of the He-Ti film and the formation of He-related defects all are affected by the substrate biases applied.