Patterned porous silicon (P S) films were synthesised by using hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and characteristi cs of the PS films were ch...Patterned porous silicon (P S) films were synthesised by using hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and characteristi cs of the PS films were characterized by scanning electron microscopy (SEM), X- ray diffraction (XRD), and atomic force microscopy (AFM). The efficient electron field emission with low turn-on field of about 3.5 V/μm was obtained at cur rent density of 0.1 μA/cm 2. The electron field emission current density from the patterned PS films reached 1 mA/cm 2 under an applied field of ab out 12.5 V/μm. The experimental results show that the patterned PS films are o f certain practical significance and are valuable for flat panel displays.展开更多
基金National Natural Science Foundation of China (60476004) Foundation of Graduate Students of East ChinaNormal University(ECNU2005) Foundation of State Key Laboratory of Advanced Technology for MaterialsSynthesis and Processing( Wuhan University of Tech
文摘Patterned porous silicon (P S) films were synthesised by using hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and characteristi cs of the PS films were characterized by scanning electron microscopy (SEM), X- ray diffraction (XRD), and atomic force microscopy (AFM). The efficient electron field emission with low turn-on field of about 3.5 V/μm was obtained at cur rent density of 0.1 μA/cm 2. The electron field emission current density from the patterned PS films reached 1 mA/cm 2 under an applied field of ab out 12.5 V/μm. The experimental results show that the patterned PS films are o f certain practical significance and are valuable for flat panel displays.
