The use of broadband laser technology is a novel approach for inhibiting processes related to laser plasma interactions(LPIs).In this study,several preliminary experiments into broadband-laser-driven LPIs are carried ...The use of broadband laser technology is a novel approach for inhibiting processes related to laser plasma interactions(LPIs).In this study,several preliminary experiments into broadband-laser-driven LPIs are carried out using a newly established hundreds-of-joules broadband second-harmonic-generation laser facility.Through direct comparison with LPI results for a traditional narrowband laser,the actual LPI-suppression effect of the broadband laser is shown.The broadband laser had a clear suppressive effect on both back-stimulated Raman scattering and back-stimulated Brillouin scattering at laser intensities below 1×10^(15) W cm^(−2).An abnormal hot-electron phenomenon is also investigated,using targets of different thicknesses.展开更多
The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to ...The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.展开更多
基金supported by the National Science Foundation of China under Award Nos.12074353 and 12075227.
文摘The use of broadband laser technology is a novel approach for inhibiting processes related to laser plasma interactions(LPIs).In this study,several preliminary experiments into broadband-laser-driven LPIs are carried out using a newly established hundreds-of-joules broadband second-harmonic-generation laser facility.Through direct comparison with LPI results for a traditional narrowband laser,the actual LPI-suppression effect of the broadband laser is shown.The broadband laser had a clear suppressive effect on both back-stimulated Raman scattering and back-stimulated Brillouin scattering at laser intensities below 1×10^(15) W cm^(−2).An abnormal hot-electron phenomenon is also investigated,using targets of different thicknesses.
基金Project supported by the National Natural Science Foundation of China(Grant No.12004329)Open Project of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(Grant No.SKLIPR2115)+1 种基金Postgraduate Research and Practice Innovation Program of Jiangsu Province(Grant No.SJCX22_1704)Innovative Science and Technology Platform Project of Cooperation between Yangzhou City and Yangzhou University,China(Grant Nos.YZ202026301 and YZ202026306)。
文摘The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.