Thin Ru_(21)Zr_(64)Si_(15) films deposited on Si substrates by radio frequency reactive magnetron sputtering are studied and evaluated as diffusion barriers for Cu metallization.Cu/Ru_(21)Zr_(64)Si_(15)/Si and Cu/Zr_(...Thin Ru_(21)Zr_(64)Si_(15) films deposited on Si substrates by radio frequency reactive magnetron sputtering are studied and evaluated as diffusion barriers for Cu metallization.Cu/Ru_(21)Zr_(64)Si_(15)/Si and Cu/Zr_(67)Si_(33)/Si structure samples are prepared under the same procedures for comparison.The thermal stability,phase formation,surface morphology and atomic depth profile of the Cu/Ru_(21)Zr_(64)Si_(15)/Si and Cu/Zr_(67)Si_(33)/Si structures before and after annealing at different temperatures are investigated.In conjunction with these analyses,the Cu/Ru_(21)Zr_(64)Si_(15)/Si contact system shows high thermal stability at least up to 650℃.The results obtained reveal that the incorporation of Ru atoms into the Zr_(67)Si_(33) barrier layer is shown to be beneficial for improving the thermal stability of the Cu/barrier/Si contact system.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 60906048the Program for New Century Excellent Talents in University under Grant No NCET-10-0052.
文摘Thin Ru_(21)Zr_(64)Si_(15) films deposited on Si substrates by radio frequency reactive magnetron sputtering are studied and evaluated as diffusion barriers for Cu metallization.Cu/Ru_(21)Zr_(64)Si_(15)/Si and Cu/Zr_(67)Si_(33)/Si structure samples are prepared under the same procedures for comparison.The thermal stability,phase formation,surface morphology and atomic depth profile of the Cu/Ru_(21)Zr_(64)Si_(15)/Si and Cu/Zr_(67)Si_(33)/Si structures before and after annealing at different temperatures are investigated.In conjunction with these analyses,the Cu/Ru_(21)Zr_(64)Si_(15)/Si contact system shows high thermal stability at least up to 650℃.The results obtained reveal that the incorporation of Ru atoms into the Zr_(67)Si_(33) barrier layer is shown to be beneficial for improving the thermal stability of the Cu/barrier/Si contact system.
