High-sensitive and fast MXene/silicon photodetector forsingle-pixel X-ray imaging

The demand for high-performance X-ray detectors leads to material innovationfor efficient photoelectric conversion and carrier transfer. However, currentX-ray detectors are often susceptible to chemical and irradiation instability,complex fabrication processes, hazardous components, and difficult compatibility.Here, we investigate a two-dimensional (2D) material with a relativelylow atomic number, Ti_(3)C_(2)T_(x) MXenes, and single crystal silicon for X-ray detectionand single-pixel imaging (SPI). We fabricate a Ti_(3)C_(2)T_(x) MXene/Si X-raydetector demonstrating remarkable optoelectronic performance. This detectorexhibits a sensitivity of 1.2 × 10^(7) μC Gyair^(-1) cm^(-2), a fast response speed with arise time of 31 μs, and an incredibly low detection limit of 2.85 nGyair s^(-1).These superior performances are attributed to the unique charge couplingbehavior under X-ray irradiation via intrinsic polaron formation. The deviceremains stable even after 50 continuous hours of high-dose X-ray irradiation.Our device fabrication process is compatible with silicon-based semiconductortechnology. Our work suggests new directions for eco-friendly X-ray detectorsand low-radiation imaging system.

Plasmon resonance-enhanced graphene nanofilmbased dual-band infrared silicon photodetector

Graphene-based photodetectors have attracted much attention due to their unique properties,such as high-speed and wide-band detection capability.However,they suffer from very low external quantum efficiency in the infrared(IR)region and lack spectral selectivity.Here,we construct a plasmon-enhanced macro-assembled graphene nanofilm(nMAG)based dual-band infrared silicon photodetector.The Au plasmonic nanostructures improve the absorption of long-wavelength photons with energy levels below the Schottky barrier(between metal and Si)and enhance the interface transport of electrons.Combined with the strong photo-thermionic emission(PTI)effect of nMAG,the n MAG–Au–Si heterojunctions show strong dual-band detection capability with responsivities of52.9 mA/W at 1342 nm and 10.72 mA/W at 1850 nm,outperforming IR detectors without plasmonic nanostructures by 58–4562 times.The synergy between plasmon–exciton resonance enhancement and the PTI effect opens a new avenue for invisible light detection.

Macroscopic assembled graphene nanofilms based room temperature ultrafast mid-infrared photodetectors

Graphene with linear energy dispersion and weak electron-phonon interaction is highly anticipated to harvest hot electrons in a broad wavelength range.However,the limited absorption and serious backscattering of hot-electrons result in inadequate quantum yields,especially in the mid-infrared range.Here,we report a macroscopic assembled graphene(nMAG)nanofilm/silicon heterojunction for ultrafast mid-infrared photodetection.The assembled Schottky diode works in 1.5-4.0μm at room temperature with fast response(20-30 ns,rising time,4 mm2 window)and high detectivity(1.61011 to 1.9109 Jones from 1.5 to 4.0μm)under the pulsed laser,outperforming single-layer-graphene/silicon photodetectors by 2-8 orders.These performances are attributed to the greatly enhanced photo-thermionic effect of electrons in nMAG due to its high light absorption(~40%),long carrier relaxation time(~20 ps),low work function(4.52 eV),and suppressed carrier number fluctuation.The nMAG provides a long-range platform to understand the hot-carrier dynamics in bulk 2D materials,leading to broadband and ultrafast MIR active imaging devices at room temperature.