Harnessing the frequency dimension in integrated photonics offers key advantages in terms of scalability,noise resilience,parallelization,and compatibility with telecom multiplexing techniques.Integrated ring resonato...Harnessing the frequency dimension in integrated photonics offers key advantages in terms of scalability,noise resilience,parallelization,and compatibility with telecom multiplexing techniques.Integrated ring resonators have been used to generate frequency-entangled states through spontaneous four-wave mixing.However,state-of-the-art integrated resonators are limited by trade-offs among size,spectral separation,and efficient photon pair generation.We have developed silicon ring resonators with a footprint below 0.05 mm^(2)providing more than 70 frequency channels separated by 21 GHz.We exploit the narrow frequency separation to parallelize and independently control 34 single qubit-gates with a single set of three off-the-shelf electro-optic devices.We fully characterize 17 frequency-bin maximally entangled qubit pairs by performing quantum state tomography.We demonstrate for the first time,we believe,a fully connected five-user quantum network in the frequency domain.These results are a step towards a generation of quantum circuits implemented with scalable silicon photonics technology,for applications in quantum computing and secure communications.展开更多
We report supercontinuum generation in nitrogen-rich(N-rich)silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor(CMOS)-compatible processes on a 300 mm platform.By pumping in ...We report supercontinuum generation in nitrogen-rich(N-rich)silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor(CMOS)-compatible processes on a 300 mm platform.By pumping in the anomalous dispersion regime at a wavelength of 1200 nm,two-octave spanning spectra covering the visible and near-infrared ranges,including the O band,were obtained.Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride,despite the lower silicon content.N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.展开更多
基金supported by Region Ile-de-France in the framework of DIM SIRTEQthe European Union’s Horizon 2020 research under the Marie Skłodowska-Curie(Grant No.800306)
文摘Harnessing the frequency dimension in integrated photonics offers key advantages in terms of scalability,noise resilience,parallelization,and compatibility with telecom multiplexing techniques.Integrated ring resonators have been used to generate frequency-entangled states through spontaneous four-wave mixing.However,state-of-the-art integrated resonators are limited by trade-offs among size,spectral separation,and efficient photon pair generation.We have developed silicon ring resonators with a footprint below 0.05 mm^(2)providing more than 70 frequency channels separated by 21 GHz.We exploit the narrow frequency separation to parallelize and independently control 34 single qubit-gates with a single set of three off-the-shelf electro-optic devices.We fully characterize 17 frequency-bin maximally entangled qubit pairs by performing quantum state tomography.We demonstrate for the first time,we believe,a fully connected five-user quantum network in the frequency domain.These results are a step towards a generation of quantum circuits implemented with scalable silicon photonics technology,for applications in quantum computing and secure communications.
基金European Research CouncilAgence Nationale de la RechercheAstre Essonne。
文摘We report supercontinuum generation in nitrogen-rich(N-rich)silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor(CMOS)-compatible processes on a 300 mm platform.By pumping in the anomalous dispersion regime at a wavelength of 1200 nm,two-octave spanning spectra covering the visible and near-infrared ranges,including the O band,were obtained.Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride,despite the lower silicon content.N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.
