The a-Ge:H/a-SiNx:H multiquantiim-well structures were prepared by a computercon trolied plasma,enhanced clieinicaJ vapor deposition method and tAeii crystallized by At+laser annealing technique.When the Ge well-layer...The a-Ge:H/a-SiNx:H multiquantiim-well structures were prepared by a computercon trolied plasma,enhanced clieinicaJ vapor deposition method and tAeii crystallized by At+laser annealing technique.When the Ge well-layer thickness was reduced to 30 A,the crystallized sample showed a roojn temperature pLotoluininescence with a peak at about 2.26 eV.Mennwhile some significant characteristics of such a novel Ge na.nostructiire were also revealed by x-ray difEraction.Possible mechanisms of this visible PL phenomenon have been discussed.展开更多
文摘The a-Ge:H/a-SiNx:H multiquantiim-well structures were prepared by a computercon trolied plasma,enhanced clieinicaJ vapor deposition method and tAeii crystallized by At+laser annealing technique.When the Ge well-layer thickness was reduced to 30 A,the crystallized sample showed a roojn temperature pLotoluininescence with a peak at about 2.26 eV.Mennwhile some significant characteristics of such a novel Ge na.nostructiire were also revealed by x-ray difEraction.Possible mechanisms of this visible PL phenomenon have been discussed.
