The inorganic-organic hybrid junction was synthesized on ITO glass substrate, which was consisted of an n-type ZnO nanorods （NRs） grown by low-temperature aqueous chemical growth method and a p-type polyfluorene （P...The inorganic-organic hybrid junction was synthesized on ITO glass substrate, which was consisted of an n-type ZnO nanorods （NRs） grown by low-temperature aqueous chemical growth method and a p-type polyfluorene （PF） organic film fabricated by spin-coating. The experimental results indicate that densely and uniformly distributed ZnO nanorods are successfully grown on the PF layer. The thickness of the PF layer plays a dominant role for the current-voltage （I-V） characteristic of the ZnO NRs/PF inorganic-organic hybrid junction device, and a p-n junction with obviously rectifying behavior is achieved with optimal PF layer thickness. The photoluminescence （PL） spectrum covering the broad visible range was obtained from the n-ZnO nanorods/p-polyfluorene （PF） structure, which was originated from the combination of the PF-related blue emission and the ZnO-related deep level emission.展开更多
ZnO thin films were deposited on graphite substrates by ultrasonic spray pyrolysis method with Zn（CH3COO）2·2H2O aqueous solution as precursor. The crystalline structure, morphology, and optical properties of th...ZnO thin films were deposited on graphite substrates by ultrasonic spray pyrolysis method with Zn（CH3COO）2·2H2O aqueous solution as precursor. The crystalline structure, morphology, and optical properties of the as-grown ZnO films were investigated systematically as a function of deposition temperature and growth time. Near-band edge ultraviolet （UV） emission was observed in room temperature photoluminescence spectra for the optimized samples, yet the usually observed defect related deep level emissions were nearly undetectable, indicating that high optical quality ZnO thin films could be achieved via this ultrasonic spray pyrolysis method. Considering the features of transferable and low thermal resistance of the graphite substrates, the achievement will be of special interest for the development of high-power semiconductor devices with sufficient vower durability.展开更多
In this paper, ZnO films are deposited on freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapour deposition (MOCVD). Diethyl zinc (DEZn), O2 and N2O are applied as precursors and diff...In this paper, ZnO films are deposited on freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapour deposition (MOCVD). Diethyl zinc (DEZn), O2 and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction (XRD), Hall measurements and electron probe microanalysis (EPMA). Experimental results demonstrate that ZnO films deposited at 600℃ and 73 Pa display a fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.展开更多
CdSxSe1-x quantum dots were fabricated by a simple spin-coating heat volatilization method on InP wafer.Temperature dependent photoluminescence of CdSxSe1-x quantum dots was carried out in a range of 10-300 K.The inte...CdSxSe1-x quantum dots were fabricated by a simple spin-coating heat volatilization method on InP wafer.Temperature dependent photoluminescence of CdSxSe1-x quantum dots was carried out in a range of 10-300 K.The integrated photoluminescence intensity revealed an anomalous behavior with increasing temperature in the range of 180-200 K.The band gap energy showed a redshift of 61.34 meV when the temperature increased from 10 to 300 K.The component ratio of S to Se in the CdSxSe1-x quantum dots was valued by both the X-ray diffraction data and photoluminescence peak energy at room temperature according to Vegard Law.Moreover,the parameters of the Varshni relation for CdS0.9Se0.1 materials were also obtained using photoluminescence peak energy as a function of temperature and the best-fit curve:α=(3.5 ± 0.1)10-4 eV/K,and β=210 ± 10 K (close to the Debye temperature θD of the material).展开更多
基金Funded by the National Natural Science Foundation of China (Nos.10804014,11004092,60807009)the Fundamental Research Funds for the Central Universities (No.DUT10LK01)
文摘The inorganic-organic hybrid junction was synthesized on ITO glass substrate, which was consisted of an n-type ZnO nanorods （NRs） grown by low-temperature aqueous chemical growth method and a p-type polyfluorene （PF） organic film fabricated by spin-coating. The experimental results indicate that densely and uniformly distributed ZnO nanorods are successfully grown on the PF layer. The thickness of the PF layer plays a dominant role for the current-voltage （I-V） characteristic of the ZnO NRs/PF inorganic-organic hybrid junction device, and a p-n junction with obviously rectifying behavior is achieved with optimal PF layer thickness. The photoluminescence （PL） spectrum covering the broad visible range was obtained from the n-ZnO nanorods/p-polyfluorene （PF） structure, which was originated from the combination of the PF-related blue emission and the ZnO-related deep level emission.
基金Funded by the Fundamental Research Funds for the Central Universities(No.DUT12ZD(G)01)the Opening Project of Key Laboratory of Inorganic Coating Materials,Chinese Academy of Sciences(No.KLICM-2012-01)
文摘ZnO thin films were deposited on graphite substrates by ultrasonic spray pyrolysis method with Zn（CH3COO）2·2H2O aqueous solution as precursor. The crystalline structure, morphology, and optical properties of the as-grown ZnO films were investigated systematically as a function of deposition temperature and growth time. Near-band edge ultraviolet （UV） emission was observed in room temperature photoluminescence spectra for the optimized samples, yet the usually observed defect related deep level emissions were nearly undetectable, indicating that high optical quality ZnO thin films could be achieved via this ultrasonic spray pyrolysis method. Considering the features of transferable and low thermal resistance of the graphite substrates, the achievement will be of special interest for the development of high-power semiconductor devices with sufficient vower durability.
基金Supported by the National Natural Science Foundation of China (Grant No. 60307002)
文摘In this paper, ZnO films are deposited on freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapour deposition (MOCVD). Diethyl zinc (DEZn), O2 and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction (XRD), Hall measurements and electron probe microanalysis (EPMA). Experimental results demonstrate that ZnO films deposited at 600℃ and 73 Pa display a fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.
基金supported by the NSFC (No. 50532080)the Key Laboratory Projects of The Education Department of Liaoning Province (No. 20060131)
文摘CdSxSe1-x quantum dots were fabricated by a simple spin-coating heat volatilization method on InP wafer.Temperature dependent photoluminescence of CdSxSe1-x quantum dots was carried out in a range of 10-300 K.The integrated photoluminescence intensity revealed an anomalous behavior with increasing temperature in the range of 180-200 K.The band gap energy showed a redshift of 61.34 meV when the temperature increased from 10 to 300 K.The component ratio of S to Se in the CdSxSe1-x quantum dots was valued by both the X-ray diffraction data and photoluminescence peak energy at room temperature according to Vegard Law.Moreover,the parameters of the Varshni relation for CdS0.9Se0.1 materials were also obtained using photoluminescence peak energy as a function of temperature and the best-fit curve:α=(3.5 ± 0.1)10-4 eV/K,and β=210 ± 10 K (close to the Debye temperature θD of the material).
