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岛礁环境对吊耳疲劳性能影响研究
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作者 吴洋 王玲 +4 位作者 胡涛 李茜 孙有美 秦艳军 张先勇 《装备环境工程》 CAS 2024年第1期127-134,共8页
目的 研究吊耳在岛礁环境下的腐蚀特征及其对疲劳性能的影响。方法 通过开展吊耳试验件的岛礁自然环境试验,测试其不同在试验周期的疲劳性能,分析断口形貌、元素含量变化,研究腐蚀对吊耳抗疲劳性能的影响。结果 在1a的岛礁自然环境试验... 目的 研究吊耳在岛礁环境下的腐蚀特征及其对疲劳性能的影响。方法 通过开展吊耳试验件的岛礁自然环境试验,测试其不同在试验周期的疲劳性能,分析断口形貌、元素含量变化,研究腐蚀对吊耳抗疲劳性能的影响。结果 在1a的岛礁自然环境试验中,吊耳的腐蚀部位主要为表面镀层,并且呈非均匀腐蚀特征。随着试验时间的延长,吊耳平均疲劳断裂循环次数呈下降趋势,疲劳断口的韧性断裂特征减弱,并且氢含量有所增加。吊耳内部存在MnS夹杂物,位于韧窝底部。结论 吊耳表面点蚀坑、内部MnS夹杂物对疲劳载荷作用下裂纹的萌生和生长起到促进作用,降低了其抗疲劳性能,应加强腐蚀防护和质量控制。 展开更多
关键词 吊耳 岛礁环境 腐蚀 夹杂物 变幅载荷 疲劳性能
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总剂量和重离子协同作用下浮栅单元错误的退火特性研究 被引量:1
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作者 殷亚楠 刘杰 +6 位作者 姬庆刚 赵培雄 刘天奇 叶兵 罗捷 孙友梅 侯明东 《核技术》 CAS CSCD 北大核心 2019年第1期49-55,共7页
针对25 nm商用Flash存储器,利用中国科学院新疆理化技术研究所的60Coγ射线源和兰州重离子加速器先后进行了总剂量效应和单粒子效应实验。实验中器件先辐照30 krad(Si)的γ射线,然后再辐照不同线性能量转移(Linear Energy Transfer,LET... 针对25 nm商用Flash存储器,利用中国科学院新疆理化技术研究所的60Coγ射线源和兰州重离子加速器先后进行了总剂量效应和单粒子效应实验。实验中器件先辐照30 krad(Si)的γ射线,然后再辐照不同线性能量转移(Linear Energy Transfer,LET)的重离子,得到了不同条件下Flash存储器浮栅单元错误的退火特性。实验结果表明与只进行重离子辐照相比,总剂量和重离子协同作用下器件浮栅单元错误消失的比例会发生变化,且在不同LET离子的辐照下表现出相异的趋势。分析认为辐照总剂量会引起浮栅单元电荷丢失和电荷俘获,影响浮栅单元的错误退火特性。 展开更多
关键词 FLASH存储器 重离子 Γ射线 退火
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FN04Mo在七种典型大气环境下的力学性能变化规律及腐蚀机理 被引量:1
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作者 孙有美 赵全成 +3 位作者 李茜 王玲 佘祖新 王长朋 《材料导报》 EI CAS CSCD 北大核心 2021年第18期18182-18189,共8页
本工作通过金属注塑成型方法制备了FN04Mo样品,并采用电液伺服试验机、X射线衍射分析、扫描电子显微镜、能谱分析仪等对FN04Mo在万宁站、漠河站、敦煌站、拉萨站、江津站、西双版纳站、永兴站七种典型大气环境下的力学性能规律和腐蚀机... 本工作通过金属注塑成型方法制备了FN04Mo样品,并采用电液伺服试验机、X射线衍射分析、扫描电子显微镜、能谱分析仪等对FN04Mo在万宁站、漠河站、敦煌站、拉萨站、江津站、西双版纳站、永兴站七种典型大气环境下的力学性能规律和腐蚀机理进行了研究。研究结果表明,FN04Mo腐蚀初期(1~3个月)力学性能变化呈现明显的下降趋势,试验至3~18个月后其力学性能基本保持稳定。FN04Mo在七种典型大气暴露试验1年后,样品表面均布满腐蚀产物,表面腐蚀形态为点蚀。FN04Mo在富含Cl~-海洋大气环境(万宁和永兴)和富含SO_(2)工业大气环境(江津)下腐蚀最严重。样品在江津暴露1年的腐蚀产物为α-FeOOH、γ-FeOOH以及Fe_(3)O_(4),在永兴暴露9个月的腐蚀产物为β-FeOOH、γ-FeOOH、Fe_(3)O_(4)和FeOCl。侵蚀性强Cl~-和极性强SO_(2)两种大气污染物在大气环境下加剧了FN04Mo基体腐蚀,大气暴露后的FN04Mo样品因腐蚀产物的形成、分层脱落等现象,造成其有效承载面积减小,使其力学性能发生了显著变化。 展开更多
关键词 FN04Mo 大气环境试验 大气腐蚀 力学性能 腐蚀机理
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Preparation and Magnetic Properties of Cu-Ni Core-shell Nanowires in Ion-track Templates
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作者 陈永辉 DUAN Jinglai +4 位作者 YAO Huijun MO Dan WANG Tieshan sun youmei 刘杰 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2015年第4期665-669,共5页
Cu-Ni core-shell nanowires, with an inner Cu core diameter of about 60 nm and varying Ni shell thicknesses (10, 30, 50, 60, and 80 nm), were successfully fabricated in porous polycarbonate (PC) ion- track template... Cu-Ni core-shell nanowires, with an inner Cu core diameter of about 60 nm and varying Ni shell thicknesses (10, 30, 50, 60, and 80 nm), were successfully fabricated in porous polycarbonate (PC) ion- track templates by a two-step etching and electrodeposition method. In our experiment, the thickness of Ni shell can be effectively tuned through the etching time of templates. The core-shell structure was confirmed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The X-ray diffraction (XRD) pattern elucidates the co-existence of characteristic peaks for both Cu and Ni, indicating no other phases were formed during preparation. Magnetic hysteresis loops measured via vibrating sample magnetometry (VSM) revealed that Cu-Ni core-shell nanowires with thinner Ni shell exhibited obviously diamagnetic character and together with a weak ferromagnetic activity, whereas ferromagnetic behavior was primarily measured for the wires with thicker Ni shell. With increasing Ni shell thickness, the squareness and coercivity value became smaller due to the shape anisotropy and the formation of multi-domain structure. 展开更多
关键词 core-shell nanowires ion track template ETCHING ELECTRODEPOSITION magnetic property
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Design and Verification of Universal Evaluation System for Single Event Effect Sensitivity Measurement in Very-Large-Scale Integrated Circuits 被引量:1
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作者 Gao Shuai Cai Chang +1 位作者 Liu Jie sun youmei 《IMP & HIRFL Annual Report》 2019年第1期114-115,共2页
Field-programmable-gate-array(FPGA)has been wildly used in many space missions due to its high performance and reconfiguration capability[1].With the feature size continuing scaling down.
关键词 VERIFICATION figuration SCALING
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3-16 Impact of Heavy Ion Flux on Single Event Test Result of Hardened and Unhardened Flip-flop
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作者 Luo Jie Liu Jie +3 位作者 sun youmei Hou Mingdong Liu Tianqi Wang Bin 《IMP & HIRFL Annual Report》 2015年第1期110-110,共1页
Natural space presents a complicated radiation environment containing various energetic particle types at different flux level and the flux of the particles is not constant modulating by solar activities[1]. On the ot... Natural space presents a complicated radiation environment containing various energetic particle types at different flux level and the flux of the particles is not constant modulating by solar activities[1]. On the other hand, the heavy ion flux applied in ground based single event test was commonly set at a fixed value. Refs. [2] and [3] both pointed out that the single event test result of harden device may exhibit flux dependency. It is necessary to fully study the ion flux dependency on single event effect. 展开更多
关键词 Single EVENT TEST RESULT
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3 - 24 Effects of Swift Heavy Ion Irradiation Parameters on Optical Properties of Muscovite Mica
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作者 Zhang Shengxia Liu Jie +6 位作者 Zeng Jian Song Yin Mo Dan Yao Huijun Duan Jinglai sun youmei HouMingdong 《IMP & HIRFL Annual Report》 2013年第1期90-91,共2页
关键词 英语 阅读 理解 物理研究
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3 - 23 Monte Carlo Prediction of Heavy Ion Induced MBU Sensitivity in Advanced Semiconductor Devices
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作者 Xi Kai Liu Jie +5 位作者 Geng Chao Liu Jiande Gu Song Liu Tianqi HouMingdong sun youmei 《IMP & HIRFL Annual Report》 2013年第1期90-90,共1页
关键词 英语 阅读 理解 物理研究
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3 - 19 Structural Evolution of Monolayer Graphene Irradiated by Highly Charged Ions
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作者 Zeng Jian Guo Hang +6 位作者 Zhang Shengxia Yao Huijun Zhai Pengfei Duan Jinglai sun youmei Hou Mingdong Liu Jie 《IMP & HIRFL Annual Report》 2013年第1期85-86,共2页
关键词 英语 阅读 理解 物理研究
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3 - 17 A Comparative Study of Irradiation Effects in Monolayer Graphene and HOPG Induced by Swift Heavy Ions
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作者 Zeng Jian Yao Huijun +6 位作者 Zhang Shengxia Guo Hang Zhai.Pengfei Duan Jinglai sun youmei HouMingdong Liu Jie 《IMP & HIRFL Annual Report》 2013年第1期82-83,共2页
关键词 英语 阅读 理解 物理研究
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3 - 21 Influence of Heavy-ion Indirect Ionization on Single Event Upsets
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作者 Gu Song Liu Jie +3 位作者 Zhang Zhangang Luo Jie sun youmei Liu Tianqi 《IMP & HIRFL Annual Report》 2013年第1期88-89,共2页
关键词 英语 阅读 理解 物理研究
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3 - 20 Raman Investigation of Swift Heavy Ion Irradiation Effect on Single- and Few-layer MoS2
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作者 Guo Hang sun youmei +4 位作者 Liu Jie Zeng Jian Yao Huijun Zhai Pengfei Hou Mingdong 《IMP & HIRFL Annual Report》 2013年第1期86-88,共3页
关键词 英语 阅读 理解 物理研究
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3 - 26 Fabrication of Gold Nanowires with Controlled Crystallographic Orientation
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作者 Lv Shuangbao Duan Jinglai +5 位作者 Liu Jie Yao Huijun Mo Dan Chen Yonghui sun youmei HouMingdong 《IMP & HIRFL Annual Report》 2013年第1期93-93,共1页
关键词 英语 阅读 理解 物理研究
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3 - 27 Radiation Effects of High-k Dielectrics to Heavy-ion Exposure
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作者 Liu Tianqi Liu Jie +4 位作者 Yao Huijun Geng Chao Liu Jiande Duan Jinglai sun youmei 《IMP & HIRFL Annual Report》 2013年第1期94-94,共1页
关键词 英语 阅读 理解 物理研究
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3 - 18 Raman Study of Swift Heavy Ions and Highly Charged Ions Induced Defects in HOPG
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作者 Zeng Jian Zhang Shengxia +6 位作者 Guo Hang Yao Huijun Zhai Pengfei Duan Jinglai sun youmei Hou Mingdong Liu Jie 《IMP & HIRFL Annual Report》 2013年第1期84-85,共2页
关键词 英语 阅读 理解 物理研究
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3 - 22 Simulation of Radial Charge Distribution Generated by Heavy Ions
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作者 Xi Kai Liu Jie +5 位作者 Geng Chao Liu Jiande Gu Song Liu Tianqi Hou Mingdong sun youmei 《IMP & HIRFL Annual Report》 2013年第1期89-89,共1页
关键词 英语 阅读 理解 物理研究
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3-15 Irradiation Effects of HOPG and Graphene Induced by Swift Heavy Ions and Highly Charged Ions
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作者 Zeng Jian Liu Jie +8 位作者 Yao Huijun Zhai Pengfei Zhang Shengxia Guo Hang Hu Peipei Duan Jinglai Mo Dan Hou Mingdong sun youmei 《IMP & HIRFL Annual Report》 2015年第1期108-109,共2页
Monolayer graphene exfoliated on SiO2/Si substrate and bulk HOPG were irradiated by swift heavy ions (SHIs,479 MeV 86Kr and 112Sn) and highly charged ions (HCIs, 4 MeV 86Kr19+). The different irradiation effects cause... Monolayer graphene exfoliated on SiO2/Si substrate and bulk HOPG were irradiated by swift heavy ions (SHIs,479 MeV 86Kr and 112Sn) and highly charged ions (HCIs, 4 MeV 86Kr19+). The different irradiation effects caused by these two kinds of different ions were investigated by Raman spectrometer. The similarities and differences between HCIs and SHIs impacted graphene and HOPG are presented. 展开更多
关键词 HIGHLY CHARGED IONS
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3-23 Impact of Etching Tempreture on Pore Shapes of Tracketched Membranes
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作者 Liu Jiande Mo Dan +4 位作者 Yao Huijun Cao Dianliang sun youmei Duan Jinglai Liu Jie 《IMP & HIRFL Annual Report》 2015年第1期115-116,共2页
Nanopores and nanochannels produced by etching heavy ion tracks are widely used in contemporary science and technology[1]. Conical and doubly-conical nanopores (channels) have attracted special interest in the past de... Nanopores and nanochannels produced by etching heavy ion tracks are widely used in contemporary science and technology[1]. Conical and doubly-conical nanopores (channels) have attracted special interest in the past decade due to their potential in modern and rapidly growing fields, including molecular sensors, logic gates, nanoactuators, and other nanofluidic devices[2;3]. 展开更多
关键词 ETCHING Tempreture PORE
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3-19 Study of PRESTAGE Sensitivity to Variation of Input Parameters
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作者 Xi Kai Liu Jie +8 位作者 Luo Jie Liu Jiande Liu Tianqi Wang Bin Ye Bing Yin Yanan Ji Qinggang Hou Mingdong sun youmei 《IMP & HIRFL Annual Report》 2015年第1期112-112,共1页
PRESTAGE is a Monte Carlo simulation code which calculates proton single event effect cross sections from heavy ion test data. It can accurately predict not only single event upsets induced by proton indirect ionizati... PRESTAGE is a Monte Carlo simulation code which calculates proton single event effect cross sections from heavy ion test data. It can accurately predict not only single event upsets induced by proton indirect ionization,but also single event latch-ups and proton direct ionization effects[1]. However, in practical applications some of the input parameters are difficult to obtain. For instance, the thickness of the sensitive volume is closely related to the topology, doping concentration, and other device parameters. Device suppliers are generally reluctant to disclose such information due to the consideration of intellectual property protection. Therefore, examining the sensitivity to the input parameters is important to the usage of the PRESTAGE method. 展开更多
关键词 RESTAGE Sensitivity VARIATION
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3-21 Prediction of Single Event Effects Induced by Protons in Semiconductor Devices
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作者 Xi Kai Liu Jie +8 位作者 Luo Jie Liu Jiande Liu Tianqi Wang Bin Ye Bing Yin Yanan Ji Qinggang Hou Mingdong sun youmei 《IMP & HIRFL Annual Report》 2015年第1期114-114,共1页
Space radiation environments in which satellites and spacecraft are flying contain a large amount of high-energy protons. These protons could induce single event effects in semi-conductor devices and severely destroy ... Space radiation environments in which satellites and spacecraft are flying contain a large amount of high-energy protons. These protons could induce single event effects in semi-conductor devices and severely destroy the operational reliability of the device. Therefore, estimating proton single event effect cross-sections and calculating error rates in space for the spaceflight devices are vital to the safety guarantee of the satellite in orbit[1]. Nowadays, the most commonly used theoretical methods of predicting proton single event effect cross-sections give inaccurate predictions in many circumstances[2]. 展开更多
关键词 EVENT EFFECTS INDUCED
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