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Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices 被引量:1
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作者 swe z.oo ANTULIO TARAZONA +6 位作者 ALI Z.KHOKHAR RAFIDAH PETRA YOHANN FRANZ GORAN Z.MASHANOVICH GRAHAM T.REED ANNA C.PEACOCK HAROLD M.H.CHONG 《Photonics Research》 SCIE EI CSCD 2019年第2期193-200,共8页
We demonstrate low-loss hydrogenated amorphous silicon(a-Si:H) waveguides by hot-wire chemical vapor deposition(HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated an... We demonstrate low-loss hydrogenated amorphous silicon(a-Si:H) waveguides by hot-wire chemical vapor deposition(HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm^(-1), peak width(full width at half-maximum) of 68.9 cm^(-1), and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide. 展开更多
关键词 HOT-WIRE LOW-LOSS AMORPHOUS
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