In this research work, (Bi<sub>2</sub>O<sub>3</sub>Fe<sub>2</sub>O<sub>3</sub>)<sub>0.4</sub>(Nb<sub>2</sub>O<sub>5</sub>)<sub>...In this research work, (Bi<sub>2</sub>O<sub>3</sub>Fe<sub>2</sub>O<sub>3</sub>)<sub>0.4</sub>(Nb<sub>2</sub>O<sub>5</sub>)<sub>0.6</sub> was made by the solid state reaction method. Samples were sintered at four different temperatures (850°C, 925°C, 1000°C and 1150°C) to study the effect of sintering temperature on the various properties of the samples. X-ray diffraction analysis confirmed that single phase Bi<sub>1.721</sub>δ<sub>0.089</sub>Fe<sub>1.056</sub>Nb<sub>1.134</sub>O<sub>7</sub> was found when sintering temperature increased. At the same time, larger grain size was found when sintering temperature increased. From variation of dielectric loss with respect to frequency, a small peak was found when sample was sintered at higher temperature (1150°C). Dielectric constant of the sample decreases with the increase of frequency for all the samples. With the variation of temperature, DC resistivity of the samples showed that resistivity decreases with the increase of measuring temperature which indicates semiconducting nature.展开更多
文摘In this research work, (Bi<sub>2</sub>O<sub>3</sub>Fe<sub>2</sub>O<sub>3</sub>)<sub>0.4</sub>(Nb<sub>2</sub>O<sub>5</sub>)<sub>0.6</sub> was made by the solid state reaction method. Samples were sintered at four different temperatures (850°C, 925°C, 1000°C and 1150°C) to study the effect of sintering temperature on the various properties of the samples. X-ray diffraction analysis confirmed that single phase Bi<sub>1.721</sub>δ<sub>0.089</sub>Fe<sub>1.056</sub>Nb<sub>1.134</sub>O<sub>7</sub> was found when sintering temperature increased. At the same time, larger grain size was found when sintering temperature increased. From variation of dielectric loss with respect to frequency, a small peak was found when sample was sintered at higher temperature (1150°C). Dielectric constant of the sample decreases with the increase of frequency for all the samples. With the variation of temperature, DC resistivity of the samples showed that resistivity decreases with the increase of measuring temperature which indicates semiconducting nature.
