Organic thin film solar cells are potential next generation solar cells. Many p-type semiconductors have been used in organic solar cells, but there have been far fewer reports involving n-type organic semiconductors....Organic thin film solar cells are potential next generation solar cells. Many p-type semiconductors have been used in organic solar cells, but there have been far fewer reports involving n-type organic semiconductors. Developing new n-type organic semiconductors is therefore desirable. Polysilane thin films were spin-coated from solutions containing phosphorus (P), and the effects of P addition on film microstructures and electronic properties as n-type semiconductors were investigated. Microstructures of poly-methyl-phenyl-silane (PMPS), dimethyl-polysilane (DMPS) and deca-phenyl-penta-silane (DPPS) thin films were investigated by X-ray diffraction and transmission electron microscopy. PMPS thin films doped with P (PMPS(P)) were amorphous upon annealing at 300°C, while DMPS(P) and DPPS(P) thin films exhibited crystalline structures. PMPS(P) and DMPS(P) thin films exhibited decreased electrical resistances upon P doping. The energy gaps of PMPS(P), DMPS(P) and DPPS(P) were 3.5, 3.9 and 3.8 eV, respectively. Decreased photoluminescence intensities of PMPS, DMPS and DPPS were observed upon P doping. The desorption of phenyl and methyl groups from PMPS(P) thin films was observed from Raman scattering measurements. Solar cells containing polysilane(P)/poly[3-hexylthiophene] heterojunction structures were fabricated and exhibited photovoltaic behavior.展开更多
Perovskite-type photovoltaic devices with polysilane hole transport layers were fabricated by a spin-coating method. In the present work, poly(methyl phenylsilane) (PMPS) and decaphenylcyclopentasilane (DPPS) were use...Perovskite-type photovoltaic devices with polysilane hole transport layers were fabricated by a spin-coating method. In the present work, poly(methyl phenylsilane) (PMPS) and decaphenylcyclopentasilane (DPPS) were used as the hole transport layers. First, structural and optical properties of the PMPS and DPPS films were investigated, and the as-prepared PMPS and DPPS films were amorphous. Optical absorption spectra of the amorphous PMPS and DPPS showed some marked features due to the nature of polysilanes. Then, microstructures, optical and photovoltaic properties of the perovskite-type photovoltaic devices with polysilane hole transport layers were investigated. Current density-voltage characteristics and incident photon to current conversion efficiency of the photovoltaic devices with the polysilane layers showed different photovoltaic performance each other, attributed to molecular structures of the polysilanes and Si content in the present hole transport layers.展开更多
文摘Organic thin film solar cells are potential next generation solar cells. Many p-type semiconductors have been used in organic solar cells, but there have been far fewer reports involving n-type organic semiconductors. Developing new n-type organic semiconductors is therefore desirable. Polysilane thin films were spin-coated from solutions containing phosphorus (P), and the effects of P addition on film microstructures and electronic properties as n-type semiconductors were investigated. Microstructures of poly-methyl-phenyl-silane (PMPS), dimethyl-polysilane (DMPS) and deca-phenyl-penta-silane (DPPS) thin films were investigated by X-ray diffraction and transmission electron microscopy. PMPS thin films doped with P (PMPS(P)) were amorphous upon annealing at 300°C, while DMPS(P) and DPPS(P) thin films exhibited crystalline structures. PMPS(P) and DMPS(P) thin films exhibited decreased electrical resistances upon P doping. The energy gaps of PMPS(P), DMPS(P) and DPPS(P) were 3.5, 3.9 and 3.8 eV, respectively. Decreased photoluminescence intensities of PMPS, DMPS and DPPS were observed upon P doping. The desorption of phenyl and methyl groups from PMPS(P) thin films was observed from Raman scattering measurements. Solar cells containing polysilane(P)/poly[3-hexylthiophene] heterojunction structures were fabricated and exhibited photovoltaic behavior.
文摘Perovskite-type photovoltaic devices with polysilane hole transport layers were fabricated by a spin-coating method. In the present work, poly(methyl phenylsilane) (PMPS) and decaphenylcyclopentasilane (DPPS) were used as the hole transport layers. First, structural and optical properties of the PMPS and DPPS films were investigated, and the as-prepared PMPS and DPPS films were amorphous. Optical absorption spectra of the amorphous PMPS and DPPS showed some marked features due to the nature of polysilanes. Then, microstructures, optical and photovoltaic properties of the perovskite-type photovoltaic devices with polysilane hole transport layers were investigated. Current density-voltage characteristics and incident photon to current conversion efficiency of the photovoltaic devices with the polysilane layers showed different photovoltaic performance each other, attributed to molecular structures of the polysilanes and Si content in the present hole transport layers.
