A Cognitive Study on Politeness Intention Processing and Its Association with Pragmatic Failure in Cross-Cultural Communication

Although a large number of studies have focused on various aspects of politeness,very little is known about how politeness intention is activated cognitively during verbal communication.The present study aims to explore the cognitive mechanism of politeness intention processing,and how it is related to pragmatic failure during cross-cultural communication.Using 30 Chinese EFL university students who were instructed to finish a probe word judgment task with 96 virtual scenarios,the results indicate that within both mono-and cross-cultural contexts,the response time in the experimental scenarios was significantly slower than that of the filler scenarios.This suggests that politeness intention was activated while understanding the surface meaning of the conversation;however,the EFL learners could not completely avoid the negative transfer of their native politeness conventions when they were comprehending the conversational intention of the target language.Furthermore,no significant differences in response time were found between the groups with high and low English pragmatic competence,illustrating that transferring the pragmatic rules and principles into cross-cultural communication skills was more cognitively demanding.Overall,this study adds to the literature on politeness research and provides some implications for foreign language pragmatic instructions.

Effects of Mg substitution on the structural and magnetic properties of Co0.5Ni（0.5-x）MgxFe2O4 nanoparticle ferrites

In this study, nanocrystalline Co-Ni-Mg ferrite powders with composition Coo.5Nio.5-xMgxFe2O4 are successfully synthesized by the co-precipitation method. A systematic investigation on the structural, morphological and magnetic properties of un-doped and Mg-doped Co-Ni ferrite nanoparticles is carried out. The prepared samples are characterized using x-ray diffraction （XRD） analysis, Fourier transform infrared spectroscopy （FTIR）, field emission scanning electron microscopy （FESEM）, and vibrating sample magnetometry （VSM）. The XRD analyses of the synthesized samples confirm the formation of single-phase cubic spinel structures with crystallite sizes in a range of - 32 nm to - 36 nm. The lat- tice constant increases with increasing Mg content. FESEM images show that the synthesized samples are homogeneous with a uniformly distributed grain. The results of IR spectroscopy analysis indicate the formation of functional groups of spinel ferrite in the co-precipitation process. By increasing Mg2- substitution, room temperature magnetic measurement shows that maximum magnetization and coercivity increase from - 57.35 emu/g to - 61.49 emu/g and - 603.26 Oe to 684.11 Oe （l Oe = 79.5775 A.m-l）, respectively. The higher values of magnetization Ms and Mr suggest that the opti- mum composition is Co0.5Ni0.4Mg0.1Fe204 that can be applied to high-density recording media and microwave devices.

Optical behavior of self-assembled high-density Ge nanoislands embedded in SiO_2

The radio frequency magnetron sputtering method is used to prepare well-dispersed pyramidal-shaped Ge nanoislands embedded in amorphous SiO2 sublayers of various thicknesses. The estimated size and number density of Ge nanoislands in SiO2 sublayer thicknesses beyond 30 nm are approximately 15 nm and 1011 cm-2, respectively. Atomic force microscopy （AFM） reveals root mean square （RMS） roughness sensitivity as the SiO2 sublayer thickness varies from 30 to 40 nm. The formation of nanoislands with high aspect ratios is attributed to the higher rate of surface reactions between Ge adatoms and nucleated Ge islands than reactions associated with SiO2 and Ge. The Ge nanoisland polyorientation on SiO2 （50-nm thickness） is revealed by X-ray diffraction （XRD） patterns. Photoluminescence （PL） peaks of 2.9 and 1.65 eV observed at room temperature （RT） are attributed to the radiative recombination of electrons and holes from the Ge nanoislands/SiO2 and Si02/Si interfaces, respectively. The mean island sizes are determined by fitting the experimental Raman profile to two models, namely, the phonon confinement model and the size distribution combined with phonon confinement model. The latter model yields the best fit to the experimental data. We confirm that SiO2 matrix thickness variations play a significant role in the formation of Ge nanoislands mediated via the minimization of interfacial and strain energies. OCIS codes： 250.5230, 170.5660.