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Combined Electromagnetic and Drift Diffusion Models for Microwave Semiconductor Device
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作者 samir labiod Saida Latreche +1 位作者 Mourad Bella Christian Gontrand 《Journal of Electromagnetic Analysis and Applications》 2011年第10期423-429,共7页
In this work, we present a numerical model to solve the drift diffusion equations coupled with electromagnetic model, where all simulations codes are implemented using MATLAB code software. As first, we present a one-... In this work, we present a numerical model to solve the drift diffusion equations coupled with electromagnetic model, where all simulations codes are implemented using MATLAB code software. As first, we present a one-dimensional (1-D) PIN diode structure simulation achieved by solving the drift diffusion model (DDM). Backward Euler algorithm is used for the discretization of the proposed model. The aim is to accomplish time-domain integration. Also, finite different method (FDM) is considered to achieve space-Domain mesh. We introduced an iterative scheme to solve the obtained matrix systems, which combines the Gummel’s iteration with an efficient direct numerical UMFPACK method. The obtained solutions of the proposed algorithm provide the time and space distribution of the unknown functions like electrostatic potential and carrier’s concentration for the PIN diode. As second case, the finite-difference time-domain (FDTD) technique is adopted to analyze the entire 3-D structure of the stripline circuit including the lumped element PIN diode. The microwave circuit is located in an unbounded medium, requiring absorbing boundaries to avoid nonphysical reflections. Active device results were presented and show a good agreement with other reference. Electromagnetic results are qualitatively in agreement with other results obtained using SILVACO-TCAD. 展开更多
关键词 DRIFT-DIFFUSION Model GUMMEL’s METHOD BACKWARD EULER MAXWELL’s Equation 3-D FDTD METHOD
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Insights into Three-Dimensional Radiofrequency Circuits Connections
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作者 Rabah Dahmani Olivier Valorge +5 位作者 Fengyuan Sun samir labiod Francis Calmon Saida Latreche Ian O'Connor Christian Gontrand 《Computer Technology and Application》 2011年第6期456-470,共15页
关键词 电路连接 射频 快速傅立叶变换 三维 时域有限差分 电磁波传播 时域方法 磁场分布
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Mixed-Mode Device Modeling of DGMOS RF Oscillators
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作者 Mourad Bella Saida Latreche +1 位作者 samir labiod Christian Gontrand 《Circuits and Systems》 2014年第1期18-26,共9页
A Colpitts oscillator, working around a 3 GHz frequency, contains a double gate Metal Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved, applying a quantum model to the device, whereas the rest... A Colpitts oscillator, working around a 3 GHz frequency, contains a double gate Metal Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved, applying a quantum model to the device, whereas the rest of the considered circuit is governed by Kirchhoff’s laws. The Linear Time Variant (LTV) model of phase noise is based on the Impulse Sensitivity Function of the Colpitts Oscillator which describes carefully the sensitivity of an oscillator to any impulse current injection in any node of the circuit. Finally, we improve the phase noise modeling, confronting some analytical developments to mixed-mode simulations. 展开更多
关键词 DGMOS TRANSISTOR COLPITTS OSCILLATOR RADIOFREQUENCY Mixed Mode Simulation ISF Function Noise
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