In the recent years, transition-metal dichalcogenides such as MoS2 have attracted considerable attention owing to their unique structure and electronic properties. Chemical vapor deposition （CVD） is a popular method...In the recent years, transition-metal dichalcogenides such as MoS2 have attracted considerable attention owing to their unique structure and electronic properties. Chemical vapor deposition （CVD） is a popular method for producing MoS2 flakes with different shapes. Here, we report an effective method for achieving a broad range of shape evolution in CVD-grown monolayer MoS2 flakes. By controlling the S and MoO3 temperatures, the shape of the monolayer MoS2 flakes was varied from hexagonal to triangular via intermediate shapes such as truncated and multi-apex triangles. The shape evolution of the MoS2 flakes can be explained by introducing the term “nominal Mo：S ratio”, which refers to the amount of loaded MoO3 and evaporated S powders. By using the nominal Mo：S ratio, we predicted the potential reaction atmosphere and effectively controlled the actual proportion of MoO3-x with respect to S in the growth region, along with the growth temperature. From the systematic investigation of the behavior of the shape evolution, we developed a shape-evolution diagram, which can be used as a practical guide for producing CVD-grown MoS2 flakes with desired shapes展开更多
Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enablin...Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly（1,3,5-trivinyl-l,3,5-trimethyl cyclotrisiloxane） （pV3D3）-based memristor array. Although memristive logic-in-memory circuits have been previously reported, the requirements of additional components and the large variation of memristors have limited demonstrations to simple gates within a few operation cycles on rigid substrates only. Using memristor-aided logic （MAGIC） architecture requiring only memristors and pV3D3-memristor with good uniformity on a flexible substrate, for the first time, we experimentally demonstrated our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within a crossbar array. This research advances the development of novel computing architecture with zero static power consumption for battery- powered flexible electronic systems.展开更多
文摘In the recent years, transition-metal dichalcogenides such as MoS2 have attracted considerable attention owing to their unique structure and electronic properties. Chemical vapor deposition （CVD） is a popular method for producing MoS2 flakes with different shapes. Here, we report an effective method for achieving a broad range of shape evolution in CVD-grown monolayer MoS2 flakes. By controlling the S and MoO3 temperatures, the shape of the monolayer MoS2 flakes was varied from hexagonal to triangular via intermediate shapes such as truncated and multi-apex triangles. The shape evolution of the MoS2 flakes can be explained by introducing the term “nominal Mo：S ratio”, which refers to the amount of loaded MoO3 and evaporated S powders. By using the nominal Mo：S ratio, we predicted the potential reaction atmosphere and effectively controlled the actual proportion of MoO3-x with respect to S in the growth region, along with the growth temperature. From the systematic investigation of the behavior of the shape evolution, we developed a shape-evolution diagram, which can be used as a practical guide for producing CVD-grown MoS2 flakes with desired shapes
文摘Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly（1,3,5-trivinyl-l,3,5-trimethyl cyclotrisiloxane） （pV3D3）-based memristor array. Although memristive logic-in-memory circuits have been previously reported, the requirements of additional components and the large variation of memristors have limited demonstrations to simple gates within a few operation cycles on rigid substrates only. Using memristor-aided logic （MAGIC） architecture requiring only memristors and pV3D3-memristor with good uniformity on a flexible substrate, for the first time, we experimentally demonstrated our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within a crossbar array. This research advances the development of novel computing architecture with zero static power consumption for battery- powered flexible electronic systems.
