Transparent conducting ZnO （zinc oxide） thin films with an average thickness of 130 nm were deposited on glass substrates at substrate temperature of 373 K by RF （radio frequency） sputtering and annealed in nitrog...Transparent conducting ZnO （zinc oxide） thin films with an average thickness of 130 nm were deposited on glass substrates at substrate temperature of 373 K by RF （radio frequency） sputtering and annealed in nitrogen atmosphere （samples S1, S2 and S3） and in open air （samples S5, S6 and S7） at 423 K, 573 K and 723 K for 60 minutes. S4 is reserved as the reference or the as-deposited sample （sample that has not been annealed）. The electrical and structural properties of the films were investigated using four-point probe, XRD （X-ray diffraction） and SEM （scanning electron microscopy）. The as-deposited sample （S4 or sample that has not been annealed） was found to have a resistivity of 11.0 ×10^-4 Ω·cm, while that of the annealed samples lies between 6.0 × 10^-4 Ω·cm and 3.5 × 10^-4 Ω·cm. The XRD analysis of the annealed films shows that they are crystalline with preferential orientation of （002） plane. Other data analyzed from the samples includes the grain size （1.5059 -1.8898 μm）, strain （1.77%-0.11%）, residual stress （4.13-0.26 GPa） and the dislocation density （0.4409/m2-0.2800/m2）.展开更多
文摘Transparent conducting ZnO （zinc oxide） thin films with an average thickness of 130 nm were deposited on glass substrates at substrate temperature of 373 K by RF （radio frequency） sputtering and annealed in nitrogen atmosphere （samples S1, S2 and S3） and in open air （samples S5, S6 and S7） at 423 K, 573 K and 723 K for 60 minutes. S4 is reserved as the reference or the as-deposited sample （sample that has not been annealed）. The electrical and structural properties of the films were investigated using four-point probe, XRD （X-ray diffraction） and SEM （scanning electron microscopy）. The as-deposited sample （S4 or sample that has not been annealed） was found to have a resistivity of 11.0 ×10^-4 Ω·cm, while that of the annealed samples lies between 6.0 × 10^-4 Ω·cm and 3.5 × 10^-4 Ω·cm. The XRD analysis of the annealed films shows that they are crystalline with preferential orientation of （002） plane. Other data analyzed from the samples includes the grain size （1.5059 -1.8898 μm）, strain （1.77%-0.11%）, residual stress （4.13-0.26 GPa） and the dislocation density （0.4409/m2-0.2800/m2）.
