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Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices 被引量:4
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作者 Tetsuji Arai Hiroki Nakaie +8 位作者 Kazuki Kamimura Hiroyuki Nakamura Satoshi Ariizumi satoki ashizawa Keisuke Arimoto Junji Yamanaka Tetsuya Sato Kiyokazu Nakagawa Toshiyuki Takamatsu 《Journal of Materials Science and Chemical Engineering》 2016年第1期29-33,共5页
We developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.1 × 1021 m<sup>?3</sup> at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas ... We developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.1 × 1021 m<sup>?3</sup> at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 10 sccm. We confirmed that the temperatures of transition-metal films increased to above 800<sup>。</sup>C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of nickel films deposited on silicon wafers and formed nickel silicide electrodes. We found that this heat phenomenon automatically stopped after the nickel slicidation reaction finished. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability of silicon ultralarge-scale integration devices. 展开更多
关键词 Selective Heating Nickel Silicide Electrode Hydrogen Plasma Microwave Plasma
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