We investigated the interfacial effects on magnetic properties in Co2Fe(Al,Si)/Ge (CFAS/Ge) and CFAS/MgO/Ge systems to demonstrate the effects of the interface structure on magnetic properties. CFAS and CFAS/MgO were ...We investigated the interfacial effects on magnetic properties in Co2Fe(Al,Si)/Ge (CFAS/Ge) and CFAS/MgO/Ge systems to demonstrate the effects of the interface structure on magnetic properties. CFAS and CFAS/MgO were deposited on the i-Ge(111) substrate. In-situ reflection high energy electron diffraction (RHEED) patterns showed epitaxially grown CFAS and MgO on Ge(111). According to the X-ray diffraction (XRD)φ-scan of CFAS(220), we determined that the crystallographic orientation relationships were CFAS(111)<-110 >//Ge(111)<-110 > and CFAS(111)<-110 >//MgO(111)<-110 > Ge(111)<-110 >. The magnetic properties were measured by the vibrating sample magnetometer (VSM) and the saturation magnetization Ms value of CFAS with 2-nm thick MgO reached the value of L21 ordered one. A uniaxial magnetic anisotropy behavior was observed both in CFAS/Ge and CFAS/MgO/Ge structures after annealing. We confirmed the behavior did not only originate from the CFAS/Ge interface but also CFAS/MgO and the ordering structure.展开更多
基金supported by JSPS KAKENHI under Grant No.15H05699
文摘We investigated the interfacial effects on magnetic properties in Co2Fe(Al,Si)/Ge (CFAS/Ge) and CFAS/MgO/Ge systems to demonstrate the effects of the interface structure on magnetic properties. CFAS and CFAS/MgO were deposited on the i-Ge(111) substrate. In-situ reflection high energy electron diffraction (RHEED) patterns showed epitaxially grown CFAS and MgO on Ge(111). According to the X-ray diffraction (XRD)φ-scan of CFAS(220), we determined that the crystallographic orientation relationships were CFAS(111)<-110 >//Ge(111)<-110 > and CFAS(111)<-110 >//MgO(111)<-110 > Ge(111)<-110 >. The magnetic properties were measured by the vibrating sample magnetometer (VSM) and the saturation magnetization Ms value of CFAS with 2-nm thick MgO reached the value of L21 ordered one. A uniaxial magnetic anisotropy behavior was observed both in CFAS/Ge and CFAS/MgO/Ge structures after annealing. We confirmed the behavior did not only originate from the CFAS/Ge interface but also CFAS/MgO and the ordering structure.
