This paper delineates the effect of nonplanar structure of Fin FETs on noise performance. We demonstrate the thermal noise analytical model that has been inferred by taking into account the presence of an additional i...This paper delineates the effect of nonplanar structure of Fin FETs on noise performance. We demonstrate the thermal noise analytical model that has been inferred by taking into account the presence of an additional inverted region in the extended（underlap） S/D region due to finite gate electrode thickness. Noise investigation includes the effects of source drain resistances which become significant as channel length becomes shorter. In this paper, we evaluate the additional noise caused by three dimensional（3-D） structure of the single fin device and then extended analysis of the multi-fin and multi-fingers structure. The addition of fringe field increases its minimum noise figure and noise resistance of approximately 1 d B and 100Ω respectively and optimum admittance increases to 5.45 mΩ at 20 GHz for a device operating under saturation region. Hence, our transformed model plays a significant function in evaluation of accurate noise performance at circuit level.展开更多
基金Project supported in part by the All India Council for Technical Education(AICTE)
文摘This paper delineates the effect of nonplanar structure of Fin FETs on noise performance. We demonstrate the thermal noise analytical model that has been inferred by taking into account the presence of an additional inverted region in the extended（underlap） S/D region due to finite gate electrode thickness. Noise investigation includes the effects of source drain resistances which become significant as channel length becomes shorter. In this paper, we evaluate the additional noise caused by three dimensional（3-D） structure of the single fin device and then extended analysis of the multi-fin and multi-fingers structure. The addition of fringe field increases its minimum noise figure and noise resistance of approximately 1 d B and 100Ω respectively and optimum admittance increases to 5.45 mΩ at 20 GHz for a device operating under saturation region. Hence, our transformed model plays a significant function in evaluation of accurate noise performance at circuit level.
